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2014 Conference on Optoelectronic and Microelectronic Materials & Devices最新文献

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Femtosecond spectrally resolved nonlinear spectroscopy: Study of Si quantum dots 飞秒光谱分辨非线性光谱学:硅量子点的研究
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038670
Vuong Van Cuong, N. Hung, K. B. Dinh, L. Dao
{"title":"Femtosecond spectrally resolved nonlinear spectroscopy: Study of Si quantum dots","authors":"Vuong Van Cuong, N. Hung, K. B. Dinh, L. Dao","doi":"10.1109/COMMAD.2014.7038670","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038670","url":null,"abstract":"We report on the use of femtosecond spectrally resolved two colour three-pulse nonlinear spectroscopy to study the carrier relaxation in Si quantum dots. The third-order polarization for a coupled two-level system is applied for theoretical simulations. The optical phonon-assisted transition leads to a fast decay (20 fs) of hot carriers.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133843468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sub-band modulated electronic transport in planar fully-depleted silicon-on-insulator MOSFETs 平面全耗尽绝缘体上硅mosfet的子带调制电子输运
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038715
G. Umana-Membreno, S. Chang, M. Bawedin, J. Antoszewski, S. Cristoloveanu, L. Faraone
{"title":"Sub-band modulated electronic transport in planar fully-depleted silicon-on-insulator MOSFETs","authors":"G. Umana-Membreno, S. Chang, M. Bawedin, J. Antoszewski, S. Cristoloveanu, L. Faraone","doi":"10.1109/COMMAD.2014.7038715","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038715","url":null,"abstract":"Multicarrier transport planar fully-depleted silicon-on-insulator MOSFETs has been investigated employing magnetic-field dependent geometrical magnetoresistance measurements and high-resolution mobility spectrum analysis. The results indicate that electronic transport in the 10 nm thick Si channel layer is due to two distinct and well-defined electron species. According to self-consistent Poisson-Schrödinger calculations, the two distinct electron species detected correspond to carriers in distinct energy sub-bands arising from strong carrier confinement and volume inversion. The mobility peak of the dominant carrier was found to occur under gate bias conditions that result in a minimum perpendicular effective electric field.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"363 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116690977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Issues in source calibration for biased target ion beam deposition 偏置目标离子束沉积源标定问题
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038674
N. RadhaKrishnan, R. Jeffery, M. Martyniuk, R. Woodward, J. H. Dell, L. Faraone
{"title":"Issues in source calibration for biased target ion beam deposition","authors":"N. RadhaKrishnan, R. Jeffery, M. Martyniuk, R. Woodward, J. H. Dell, L. Faraone","doi":"10.1109/COMMAD.2014.7038674","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038674","url":null,"abstract":"We report issues associated with the calibration of a biased target ion beam deposition system. Variations in deposition rates and oxygen flow have been observed when depositing individual metal oxide films immediately after films deposited from different targets as compared to depositions following films from the same target.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128633182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Capturing the impulse response of a second order system 捕捉二阶系统的脉冲响应
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038684
M. Young, R. Jeffery, G. Putrino, K. K. M. D. Dilusha Silva, M. Martyniuk, A. Keating, Laurie Faraone
{"title":"Capturing the impulse response of a second order system","authors":"M. Young, R. Jeffery, G. Putrino, K. K. M. D. Dilusha Silva, M. Martyniuk, A. Keating, Laurie Faraone","doi":"10.1109/COMMAD.2014.7038684","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038684","url":null,"abstract":"The impulse response of a system is of great significance when analysing a system's properties. Due to the short time scales involved in some cases, capturing this transient response requires a high degree of timing accuracy. This paper discusses the techniques used in designing a data acquisition system for initiating and recording the impulse response of a second order system. Consisting of an ADC, input buffer, FPGA, and GUI, the system can be used to analyse a range of system responses on nanosecond time scales.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125627947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sensitivity enhancement by surface texturing of Ag-doped BaTiO3-CuO thin film for CO2 gas sensor 掺银BaTiO3-CuO薄膜表面织构提高CO2气体传感器灵敏度
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038644
S. B. Rudraswamy, N. Bhat
{"title":"Sensitivity enhancement by surface texturing of Ag-doped BaTiO3-CuO thin film for CO2 gas sensor","authors":"S. B. Rudraswamy, N. Bhat","doi":"10.1109/COMMAD.2014.7038644","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038644","url":null,"abstract":"Surface texturing by fabricating micro and nano pillars of Ag-doped BaTiO3-CuO on Ag-doped BaTiO3-CuO mixed oxide thin films are evaluated for sensitivity enhancement for CO2 gas. The metal oxide film of 250 nm thickness is deposited on oxidized p-type Si <;100> substrate by RF Sputtering. Micro pillars of length 150 nm, 5um diameter and nano pillars of length 150 nm, 200 nm diameter of Ag-doped BaTiO3-CuO mixed oxide are fabricated on top of the film using lithography process. Sensing characteristics for different CO2 concentration are obtained for different operating temperatures. Surface textured sensor device shows enhanced sensitivity over thin film sensor.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129190931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-section semiconductor lasers: Their design can serve multiple applications and open possibilities for new applications 多段半导体激光器:它们的设计可以服务于多种应用，并为新应用开辟了可能性
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038645
D. Kane, J. Toomey, C. McMahon, A. Argyris, D. Syvridis
{"title":"Multi-section semiconductor lasers: Their design can serve multiple applications and open possibilities for new applications","authors":"D. Kane, J. Toomey, C. McMahon, A. Argyris, D. Syvridis","doi":"10.1109/COMMAD.2014.7038645","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038645","url":null,"abstract":"Multi-section, semiconductor lasers have traditionally been designed and optimized for a single type of output. For example: narrow linewidth, cw; or, short duration pulses at high repetition frequency, including mode-locked pulses; or, broadband, high dimensional chaotic output have been achieved. Herein we discuss how recent results from high resolution mapping of the nonlinear dynamics of a multi-section laser suggests new thinking on the design of such multi-section laser sources. They can be designed to provide several types of output in different regions of a parameter space for a device. Thus, a single design has the potential to support several different applications. This also presents an opportunity to the photonics and optoelectronics community to think creatively about what new and significant applications might benefit from sources with multiple types of output. Also, such a motivation can focus thinking on what functions can be added to the library of \"sections\" that can be integrated into multi-section devices, and how these functions can be further tailored using different materials and fabrication methods.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123984617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
nBn T2SLs InAs/GaSb/B-AlGaSb HOT detector for fast frequency response operation nBn T2SLs InAs/GaSb/B-AlGaSb HOT探测器，用于快速频率响应操作
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038697
P. Martyniuk, Wioletta Pusz, W. Gawron, D. Stępień, Lukasz Kubiszyn, Sanjay Krishna, Antoni Rogalski
{"title":"nBn T2SLs InAs/GaSb/B-AlGaSb HOT detector for fast frequency response operation","authors":"P. Martyniuk, Wioletta Pusz, W. Gawron, D. Stępień, Lukasz Kubiszyn, Sanjay Krishna, Antoni Rogalski","doi":"10.1109/COMMAD.2014.7038697","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038697","url":null,"abstract":"This paper reports on response time of mid-wavelength infrared nBn detector based on type-II 10 Monolayer/10 Monolayer InAs/GaSb superlattice structure with Al<sub>0.2</sub>Ga<sub>0.8</sub>Sb barrier. The detector structure is simulated with the numerical platform APSYS by Crosslight Inc. A detailed analysis of response time as a function of bias is performed and compared to experimental nBn detector results and PIN type-II InAs/GaSb photodiode. Time response of the nBn detector with peak wavelength, λ<sub>Peak</sub> = 4.4 μm at T = 200 K, V = 500 mV and series resistance, R<sub>Series</sub> = 100 Ω is estimated τ<sub>s</sub> ≈ 340 ps.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115301066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Hybrid integration of a tunneling diode and a 1060-nm semiconductor laser 隧道二极管与1060nm半导体激光器的混合集成
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038667
Junping Mi, Hongyan Yu, Huolei Wang, Shaoyang Tan, Wei-xi Chen, Ying Ding, Jiao-qing Pan
{"title":"Hybrid integration of a tunneling diode and a 1060-nm semiconductor laser","authors":"Junping Mi, Hongyan Yu, Huolei Wang, Shaoyang Tan, Wei-xi Chen, Ying Ding, Jiao-qing Pan","doi":"10.1109/COMMAD.2014.7038667","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038667","url":null,"abstract":"We report on a hybrid integrated tunneling diode, with a simple structure, and a quantum well laser diode, lasing at around 1060 nm, on GaAs substrate. The basic DC-characteristics of the integrated circuit was measured and analyzed. Obvious negative differential resistance regions were shown in the electrical and optical output. The device has potential applications in biomedicine and optical interconnects.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127427926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Finite element modeling of resistive switching in Nb2O5-based memory device 基于nb2o5的存储器件电阻性开关的有限元建模
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038711
Xinjun Liu, S. K. Nandi, D. Venkatachalam, Shuai Li, K. Belay, R. Elliman
{"title":"Finite element modeling of resistive switching in Nb2O5-based memory device","authors":"Xinjun Liu, S. K. Nandi, D. Venkatachalam, Shuai Li, K. Belay, R. Elliman","doi":"10.1109/COMMAD.2014.7038711","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038711","url":null,"abstract":"A physical electro-thermal model that describes bipolar resistance switching in Nb2O5-based memory devices is presented based on the finite element method. The switching mechanism is assumed to be controlled by the diffusion and drift of oxygen vacancies in conductive filaments (CFs). The proposed model correctly describes the microscopic morphology of the CF during the gradual reset transition, which provides an in-depth understanding of the operation mechanism in resistive-switching memory devices.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126926194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Exciton dissociation and design optimization in hybrid organic solar cells 混合有机太阳能电池激子解离与设计优化
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038707
M. Narayan, Jai Singh
{"title":"Exciton dissociation and design optimization in hybrid organic solar cells","authors":"M. Narayan, Jai Singh","doi":"10.1109/COMMAD.2014.7038707","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038707","url":null,"abstract":"The process of exciton dissociation in hybrid organic solar cells is studied and the rates of singlet and triplet exciton dissociations in P3HT:SiNW hybrid solar cell are calculated. Possible loss mechanisms during the dissociation process have also been highlighted. Design optimization in flexible P3HT:SiNW hybrid solar cell is performed and a power conversion efficiency of 4.70% is obtained which is a notable enhancement from its current experimental power conversion efficiency.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134091261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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