nBn T2SLs InAs/GaSb/B-AlGaSb HOT探测器，用于快速频率响应操作

2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI:10.1109/COMMAD.2014.7038697

P. Martyniuk, Wioletta Pusz, W. Gawron, D. Stępień, Lukasz Kubiszyn, Sanjay Krishna, Antoni Rogalski

{"title":"nBn T2SLs InAs/GaSb/B-AlGaSb HOT探测器，用于快速频率响应操作","authors":"P. Martyniuk, Wioletta Pusz, W. Gawron, D. Stępień, Lukasz Kubiszyn, Sanjay Krishna, Antoni Rogalski","doi":"10.1109/COMMAD.2014.7038697","DOIUrl":null,"url":null,"abstract":"This paper reports on response time of mid-wavelength infrared nBn detector based on type-II 10 Monolayer/10 Monolayer InAs/GaSb superlattice structure with Al0.2Ga0.8Sb barrier. The detector structure is simulated with the numerical platform APSYS by Crosslight Inc. A detailed analysis of response time as a function of bias is performed and compared to experimental nBn detector results and PIN type-II InAs/GaSb photodiode. Time response of the nBn detector with peak wavelength, λPeak = 4.4 μm at T = 200 K, V = 500 mV and series resistance, RSeries = 100 Ω is estimated τs ≈ 340 ps.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"nBn T2SLs InAs/GaSb/B-AlGaSb HOT detector for fast frequency response operation\",\"authors\":\"P. Martyniuk, Wioletta Pusz, W. Gawron, D. Stępień, Lukasz Kubiszyn, Sanjay Krishna, Antoni Rogalski\",\"doi\":\"10.1109/COMMAD.2014.7038697\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on response time of mid-wavelength infrared nBn detector based on type-II 10 Monolayer/10 Monolayer InAs/GaSb superlattice structure with Al0.2Ga0.8Sb barrier. The detector structure is simulated with the numerical platform APSYS by Crosslight Inc. A detailed analysis of response time as a function of bias is performed and compared to experimental nBn detector results and PIN type-II InAs/GaSb photodiode. Time response of the nBn detector with peak wavelength, λPeak = 4.4 μm at T = 200 K, V = 500 mV and series resistance, RSeries = 100 Ω is estimated τs ≈ 340 ps.\",\"PeriodicalId\":175863,\"journal\":{\"name\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2014.7038697\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2014.7038697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文报道了基于Al0.2Ga0.8Sb势垒的ii型10单层/10单层InAs/GaSb超晶格结构的中波长红外nBn探测器的响应时间。利用Crosslight公司的数值平台APSYS对探测器结构进行了仿真。详细分析了响应时间作为偏置的函数，并与实验nBn探测器结果和PIN型ii InAs/GaSb光电二极管进行了比较。当T = 200 K, V = 500 mV，串联电阻RSeries = 100 Ω时，峰值波长λPeak = 4.4 μm的nBn探测器的时间响应估计为τs≈340 ps。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

nBn T2SLs InAs/GaSb/B-AlGaSb HOT detector for fast frequency response operation

This paper reports on response time of mid-wavelength infrared nBn detector based on type-II 10 Monolayer/10 Monolayer InAs/GaSb superlattice structure with Al_0.2Ga_0.8Sb barrier. The detector structure is simulated with the numerical platform APSYS by Crosslight Inc. A detailed analysis of response time as a function of bias is performed and compared to experimental nBn detector results and PIN type-II InAs/GaSb photodiode. Time response of the nBn detector with peak wavelength, λ_Peak = 4.4 μm at T = 200 K, V = 500 mV and series resistance, R_Series = 100 Ω is estimated τ_s ≈ 340 ps.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 Conference on Optoelectronic and Microelectronic Materials & Devices

自引率

0.00%

发文量