{"title":"飞秒光谱分辨非线性光谱学:硅量子点的研究","authors":"Vuong Van Cuong, N. Hung, K. B. Dinh, L. Dao","doi":"10.1109/COMMAD.2014.7038670","DOIUrl":null,"url":null,"abstract":"We report on the use of femtosecond spectrally resolved two colour three-pulse nonlinear spectroscopy to study the carrier relaxation in Si quantum dots. The third-order polarization for a coupled two-level system is applied for theoretical simulations. The optical phonon-assisted transition leads to a fast decay (20 fs) of hot carriers.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Femtosecond spectrally resolved nonlinear spectroscopy: Study of Si quantum dots\",\"authors\":\"Vuong Van Cuong, N. Hung, K. B. Dinh, L. Dao\",\"doi\":\"10.1109/COMMAD.2014.7038670\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the use of femtosecond spectrally resolved two colour three-pulse nonlinear spectroscopy to study the carrier relaxation in Si quantum dots. The third-order polarization for a coupled two-level system is applied for theoretical simulations. The optical phonon-assisted transition leads to a fast decay (20 fs) of hot carriers.\",\"PeriodicalId\":175863,\"journal\":{\"name\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2014.7038670\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2014.7038670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Femtosecond spectrally resolved nonlinear spectroscopy: Study of Si quantum dots
We report on the use of femtosecond spectrally resolved two colour three-pulse nonlinear spectroscopy to study the carrier relaxation in Si quantum dots. The third-order polarization for a coupled two-level system is applied for theoretical simulations. The optical phonon-assisted transition leads to a fast decay (20 fs) of hot carriers.