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2014 Conference on Optoelectronic and Microelectronic Materials & Devices最新文献

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Engineering negative dispersion in porous silicon photonics using slow light effects 利用慢光效应设计多孔硅光子学中的负色散
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038708
C. Puttick, A. Andres-Arroyo, P. Reece
{"title":"Engineering negative dispersion in porous silicon photonics using slow light effects","authors":"C. Puttick, A. Andres-Arroyo, P. Reece","doi":"10.1109/COMMAD.2014.7038708","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038708","url":null,"abstract":"We explore the possibility of controlling the phase of light reflected from one-dimensional porous silicon photonic structures. By incorporating slow light effects we show it is possible to design mirrors with large negative group delay dispersion (GDD). We experimentally assess the performance of these slow-light structures for achieving dispersion compensation and pulse shaping in ultra-fast optics applications.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128025843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development Of nanowire devices with quantum functionalities 具有量子功能的纳米线器件的发展
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038655
M. Stuiber, L. W. V. van Beveren, B. Johnson, W. Weber, A. Heinzig, J. Beister, D. Jamieson, J. McCallum
{"title":"Development Of nanowire devices with quantum functionalities","authors":"M. Stuiber, L. W. V. van Beveren, B. Johnson, W. Weber, A. Heinzig, J. Beister, D. Jamieson, J. McCallum","doi":"10.1109/COMMAD.2014.7038655","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038655","url":null,"abstract":"We describe a process to fabricate doped silicon nanowires in a 4-terminal setup.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123941555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Valleytronics and pseudospintronics with chiral charge carriers in two-dimensional crystals 二维晶体中具有手性载流子的谷电子和伪自旋电子
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038650
U. Zuelicke
{"title":"Valleytronics and pseudospintronics with chiral charge carriers in two-dimensional crystals","authors":"U. Zuelicke","doi":"10.1109/COMMAD.2014.7038650","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038650","url":null,"abstract":"Electrons in two-dimensional atomic crystals such as few-layer sheets of graphene or transition-metal dichalcogenides carry several internal degrees of freedom: real spin, orbital pseudospin, and valley isospin. The interplay of these enables new approaches to spin-dependent transport effects. In this paper, three recent developments in this area are discussed: the unusual magnetoelectric properties of bilayer graphene, the possibility to generate valley-polarized currents in a vertical-tunneling heterostructure between single and bilayer sheets of graphene, and the spin response of single-layer transition-metal dichalcogenides.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114626960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and electrical properties of Iodine doped Hg1−xCdxTe films grown by MBE MBE生长的掺碘Hg1−xCdxTe薄膜的结构和电学性质
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038660
I. Madni, R. Gu, W. Lei, J. Antoszewski, L. Faraone
{"title":"Structural and electrical properties of Iodine doped Hg1−xCdxTe films grown by MBE","authors":"I. Madni, R. Gu, W. Lei, J. Antoszewski, L. Faraone","doi":"10.1109/COMMAD.2014.7038660","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038660","url":null,"abstract":"Iodine (I) doping in mercury cadmium telluride (Hg<sub>1-x</sub>Cd<sub>x</sub>Te) grown by molecular beam epitaxy (MBE) on CdZnTe substrates with cadmium-iodide (CdI<sub>2</sub>) as the dopant source was investigated. I doping concentration in the samples was controlled by CdI<sub>2</sub> source temperature that varied in 110°C-150°C range. Depending upon I doping concentration, the electrical conductivity at 77K for as grown films varied in the 3×10<sup>3</sup> Ω<sup>-1</sup>m<sup>-1</sup> - 6×10<sup>4</sup> Ω<sup>-1</sup> m<sup>-1</sup> range and was about of six to ten orders of magnitude higher than those of non-doped HgCdTe films. The Hall coefficient showed classical n-type extrinsic behavior. The electron mobility for lower doping level was observed to be as high as that in an indium-doped material reported in literature [1]. The x-ray diffraction (XRD) studies revealed that there was no prominent change in crystal structure with increasing doping concentration. However, atomic force microscopy (AFM) measurements showed that dislocation densities and consequently defect concentration and size increased with increasing doping concentration.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133556240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An investigation of MWIR, AlInSb LEDs based on double heterostructures and multiple quantum wells 基于双异质结构和多量子阱的MWIR, AlInSb led的研究
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038668
Ying Ding, L. Meriggi, M. Steer, K. Bulashevich, I. Thayne, C. MacGregor, M. Sorel, C. Ironside
{"title":"An investigation of MWIR, AlInSb LEDs based on double heterostructures and multiple quantum wells","authors":"Ying Ding, L. Meriggi, M. Steer, K. Bulashevich, I. Thayne, C. MacGregor, M. Sorel, C. Ironside","doi":"10.1109/COMMAD.2014.7038668","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038668","url":null,"abstract":"Mid-infrared LEDs based on AlInSb double heterostrucutre and multiple quantum well active regions have been simulated and investigated using the SimuLED software package from STR. The simulation results indicate that the double heterostrucutre and multiple quantum well active regions offer higher carrier injection efficiency and energy conversion. This translates into an output power and wall-plug efficiency that are three and two times higher, respectively, than a conventional homojunction active region.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131893941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Long-term stability of ICPCVD a-Si under prolonged heat treatment 长时间热处理下ICPCVD a-Si的长期稳定性
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038680
K. Brookshire, M. Martyniuk, K. K. M. D. Dilusha Silva, Yinong Liu, L. Faraone
{"title":"Long-term stability of ICPCVD a-Si under prolonged heat treatment","authors":"K. Brookshire, M. Martyniuk, K. K. M. D. Dilusha Silva, Yinong Liu, L. Faraone","doi":"10.1109/COMMAD.2014.7038680","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038680","url":null,"abstract":"Inductively coupled plasma enhanced chemical vapor deposited (ICPCVD) a-Si is used as a structural material in many microelectromechanical systems (MEMS). For a-Si to function as a sound structural component, the material must display long term mechanical stability. This paper evaluates the Young's modulus, hardness, and residual stress of a-Si under prolonged heat treatment. It is found that Young's modulus and hardness are not impacted by heat treatment, while the residual stress becomes more tensile with increased annealing time. Increased tensile stress is a result of hydrogen offgassing which can lead to improved film stability [1].","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117318958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Nanoindentation of Si1−xGex thin films prepared by biased target ion beam deposition 偏靶离子束沉积制备Si1−xGex薄膜的纳米压痕
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038692
R. Ge, X. Hou, K. Brookshire, N. Krishnan, Dilusha Silva, J. Bumgarner, Yinong Liu, L. Faraone, M. Martyniuk
{"title":"Nanoindentation of Si1−xGex thin films prepared by biased target ion beam deposition","authors":"R. Ge, X. Hou, K. Brookshire, N. Krishnan, Dilusha Silva, J. Bumgarner, Yinong Liu, L. Faraone, M. Martyniuk","doi":"10.1109/COMMAD.2014.7038692","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038692","url":null,"abstract":"The mechanical properties of Si<sub>1-x</sub>Ge<sub>x</sub> thin films are studied via nanoindentation. The Si<sub>1-x</sub>Ge<sub>x</sub> thin films are prepared with a biased target ion beam deposition (BTIBD) method. We investigate the effect of varying the Si to Ge composition ratio on the elastic modulus and hardness of the resulting alloyed films. In comparison to pure BTIBD Si (E<sub>si</sub> = 154GPa, H<sub>si</sub> = 9.9GPa), for Si<sub>1-x</sub>Ge<sub>x</sub> a decreasing trend in Young's modulus and hardness is observed to be associated with the increase in Ge content, and for Si<sub>0.5</sub>Ge<sub>0.5</sub> the values of 139 GPa and 8.4GPa are found to represent the Young's modulus and hardness, respectively.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115614340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thin-film mid-infrared semiconductor waveguide technology 薄膜中红外半导体波导技术
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038717
B. Mizaikoff, X. Wang, M. Sieger, L. Faraone, J. Antoszewski, W. Lei, M. Jetter, P. Michler
{"title":"Thin-film mid-infrared semiconductor waveguide technology","authors":"B. Mizaikoff, X. Wang, M. Sieger, L. Faraone, J. Antoszewski, W. Lei, M. Jetter, P. Michler","doi":"10.1109/COMMAD.2014.7038717","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038717","url":null,"abstract":"In this contribution we describe recent progresses on ultra-sensitive chemical sensing in the mid-infrared (MIR; 3-20 μm) spectral range combining microfabricated thin-film GaAs/AlGaAs and HgCdTe waveguides with quantum cascade lasers (QCL). Epitaxial grown methods including molecular beam epitaxy (MBE) and metal-organic vapor-phase epitaxy (MOVPE) were applied facilitating the growth of 6 μm thin on-chip waveguide layers, which may be further structured using e.g., reactive ion etching (RIE) and/or focused ion beam milling (FIB) for establishing a variety of substrate-integrated waveguide geometries. Such waveguides readily combine with single-wavelength-emitting or broadly tunable quantum cascade lasers (tQCL) providing access to the entire MIR window for advanced chem/bio sensing applications.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114068902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Hydrogen in ZnO: X-ray absorption measurements and multiple scattering theory 氧化锌中的氢:x射线吸收测量和多重散射理论
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038652
M. Petravić, R. Peter, M. Varašanec, Y. Yang, M. Yano, K. Koike
{"title":"Hydrogen in ZnO: X-ray absorption measurements and multiple scattering theory","authors":"M. Petravić, R. Peter, M. Varašanec, Y. Yang, M. Yano, K. Koike","doi":"10.1109/COMMAD.2014.7038652","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038652","url":null,"abstract":"We have identified the microscopic structure of hydrogen donors in hydrogenated ZnO samples using near-edge x-ray absorption fine structure (NEXAFS) spectroscopy and ab initio multiple scattering calculations. We present the evidence of hydrogen occupying interstitial bond-centred locations where hydrogen atoms are attached to the host O atoms in bonds that are not parallel to the c axis. This work illustrates that the combined NEXAFS measurements and multiple scattering calculations can be used to identify the local local structural configuration of hydrogen impurities in ZnO that should have broad applications for other hydrogen-containing systems.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115148201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A self-resetting piezoelectric energy harvesting rectifier 一种自复位压电能量收集整流器
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038686
ShaoHua Lu, F. Boussaid
{"title":"A self-resetting piezoelectric energy harvesting rectifier","authors":"ShaoHua Lu, F. Boussaid","doi":"10.1109/COMMAD.2014.7038686","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038686","url":null,"abstract":"This paper presents an efficient piezoelectric energy harvesting rectifier based on a modified synchronized switch harvesting on inductor (SSHI) technique. The proposed circuit does not rely on complex control circuits to operate and eliminates the need for an inductor, thereby enabling full CMOS integration. Reported results show that the harvested energy is more than 3.3 times that of the conventional full wave bridge rectifier.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123359302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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