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2014 Conference on Optoelectronic and Microelectronic Materials & Devices最新文献

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Surface plasmon enhanced light emission from AlN/GaN superlattices structure in the UV region 表面等离子体增强AlN/GaN超晶格结构在紫外区的光发射
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038676
Johnny Tang, P. Reece
{"title":"Surface plasmon enhanced light emission from AlN/GaN superlattices structure in the UV region","authors":"Johnny Tang, P. Reece","doi":"10.1109/COMMAD.2014.7038676","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038676","url":null,"abstract":"We report on the surface plasmon enhanced UV light emission from AlN/GaN superlattice structures grown on a c-plane sapphire substrate. An Al layer is selectively deposited on the top of the structures. Photoluminescence measurements from back side of the structures demonstrate output light intensity was enhanced at 291nm wavelength. This enhancement can be attributed to an increase in the spontaneous emission rate via resonance coupling between excitons in AlN/GaN superlattices and surface plasmons in the aluminum layer.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123414340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mapping the anisotropy of the Zeeman spin splitting of one-dimensional heavy holes in a GaAs quantum point contact GaAs量子点接触中一维重空穴塞曼自旋分裂的各向异性映射
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038661
K. Hudson, A. Srinivasan, Qingwen Wang, L. Yeoh, O. Klochan, I. Farrer, D. Ritchie, A. Hamilton
{"title":"Mapping the anisotropy of the Zeeman spin splitting of one-dimensional heavy holes in a GaAs quantum point contact","authors":"K. Hudson, A. Srinivasan, Qingwen Wang, L. Yeoh, O. Klochan, I. Farrer, D. Ritchie, A. Hamilton","doi":"10.1109/COMMAD.2014.7038661","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038661","url":null,"abstract":"We have studied the anisotropic Zeeman splitting of ID holes formed on a (100) GaAs/AlGaAs heterostructure on a single cooldown. The strong spin-orbit coupling of holes and ID confinement gives rise to a highly anisotropic spin-splitting. In measuring quantum point contacts on the high symmetry (100) plane, we eliminate the effects of crystal anisotropy on our direct transport measurements of the Zeeman spin-splitting. We find that g<sup>||</sup><sub>⊥QPC</sub> <; g<sup>||</sup><sub>||QPC</sub> <; g<sup>⊥ (100)</sup> where g<sup>||</sup> refers to the in-plane g-factors parallel and perpendicular to the QPC, and g<sup>⊥(100)</sup> refers to the g-factor perpendicular to the 2D interface. We compare our data with existing theories and show that there are aspects of hole spin-splitting which remain to be understood.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125415234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical spectroscopy of erbium doped monocrystalline vanadium dioxide 掺铒单晶二氧化钒的光谱学
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038698
H. Lim, B. Johnson, R. Marvel, R. Haglund, J. McCallum
{"title":"Optical spectroscopy of erbium doped monocrystalline vanadium dioxide","authors":"H. Lim, B. Johnson, R. Marvel, R. Haglund, J. McCallum","doi":"10.1109/COMMAD.2014.7038698","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038698","url":null,"abstract":"The insulator-to-metal transition (IMT) of vanadium dioxide (VO2) is promising for applications in optoelectronic switching devices. The IMT is reversible, involves dramatic changes in the optical and electrical properties, and can be triggered both optically and electrically. Furthermore, the IMT is extremely fast when excited by ultra-short optical pulses. Using this method, one transition cycle can be accomplished within a picosecond. Combining VO2 with optically active erbium ions (Er3+) grants an optical-amplification capability to the material. This feature is appealing for research, especially since the luminescence of Er3+ lies at the standard wavelength for fiberoptic communication system. This paper presents a study on the optical spectroscopy of monocrystalline VO2:Er and an empirical determination of the Er3+ transition energies in VO2.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124883653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sidewall evolution in VLS grown GaAs nanowires VLS生长砷化镓纳米线的侧壁演化
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038659
N. Jiang, J. Wong-Leung, Q. Gao, H. Tan, C. Jagadish
{"title":"Sidewall evolution in VLS grown GaAs nanowires","authors":"N. Jiang, J. Wong-Leung, Q. Gao, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2014.7038659","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038659","url":null,"abstract":"The sidewalk of Au-catalysed GaAs nanowires are studied systematically by using transmission electron microscopy. The cross-sectional shape of the VLS grown nanowires was found to consist of 3 curved surfaces along {112}A. The curved surfaces evolve into three {112}A and three {112}B facets towards the base of the nanowire due to the radial growth around the nanowire. These sidewalls transform to {110} facets at high temperature annealing and the transformation rate is determined by the cross-sectional shape and size of the nanowires.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126410133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth prediction method for new biocompatible piezoelectric thin films 新型生物相容性压电薄膜的生长预测方法
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038672
Yutaka Yasoda, Y. Uetsuji, K. Tsuchiya
{"title":"Growth prediction method for new biocompatible piezoelectric thin films","authors":"Yutaka Yasoda, Y. Uetsuji, K. Tsuchiya","doi":"10.1109/COMMAD.2014.7038672","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038672","url":null,"abstract":"We have focused on MgSiO3 (Magnesium Silicate) which is a new biocompatible piezoelectric material having large spontaneous polarization. Then, crystal thin film growth prediction method was improved in order to predict growth orientation of the non-preferred orientation direction. Calculated total energy in each orientation of distorted crystal by the buffer layer was compared to the value in the stable structure. Total energy difference between the stable state and each crystal orientation pattern showed a trend similar to that of the X-ray peak intensity. Then, energy difference needed to be below 0.001 eV for crystal to be grown.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127297355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Engineering negative dispersion in porous silicon photonics using slow light effects 利用慢光效应设计多孔硅光子学中的负色散
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038708
C. Puttick, A. Andres-Arroyo, P. Reece
{"title":"Engineering negative dispersion in porous silicon photonics using slow light effects","authors":"C. Puttick, A. Andres-Arroyo, P. Reece","doi":"10.1109/COMMAD.2014.7038708","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038708","url":null,"abstract":"We explore the possibility of controlling the phase of light reflected from one-dimensional porous silicon photonic structures. By incorporating slow light effects we show it is possible to design mirrors with large negative group delay dispersion (GDD). We experimentally assess the performance of these slow-light structures for achieving dispersion compensation and pulse shaping in ultra-fast optics applications.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128025843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development Of nanowire devices with quantum functionalities 具有量子功能的纳米线器件的发展
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038655
M. Stuiber, L. W. V. van Beveren, B. Johnson, W. Weber, A. Heinzig, J. Beister, D. Jamieson, J. McCallum
{"title":"Development Of nanowire devices with quantum functionalities","authors":"M. Stuiber, L. W. V. van Beveren, B. Johnson, W. Weber, A. Heinzig, J. Beister, D. Jamieson, J. McCallum","doi":"10.1109/COMMAD.2014.7038655","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038655","url":null,"abstract":"We describe a process to fabricate doped silicon nanowires in a 4-terminal setup.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123941555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Valleytronics and pseudospintronics with chiral charge carriers in two-dimensional crystals 二维晶体中具有手性载流子的谷电子和伪自旋电子
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038650
U. Zuelicke
{"title":"Valleytronics and pseudospintronics with chiral charge carriers in two-dimensional crystals","authors":"U. Zuelicke","doi":"10.1109/COMMAD.2014.7038650","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038650","url":null,"abstract":"Electrons in two-dimensional atomic crystals such as few-layer sheets of graphene or transition-metal dichalcogenides carry several internal degrees of freedom: real spin, orbital pseudospin, and valley isospin. The interplay of these enables new approaches to spin-dependent transport effects. In this paper, three recent developments in this area are discussed: the unusual magnetoelectric properties of bilayer graphene, the possibility to generate valley-polarized currents in a vertical-tunneling heterostructure between single and bilayer sheets of graphene, and the spin response of single-layer transition-metal dichalcogenides.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114626960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and electrical properties of Iodine doped Hg1−xCdxTe films grown by MBE MBE生长的掺碘Hg1−xCdxTe薄膜的结构和电学性质
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038660
I. Madni, R. Gu, W. Lei, J. Antoszewski, L. Faraone
{"title":"Structural and electrical properties of Iodine doped Hg1−xCdxTe films grown by MBE","authors":"I. Madni, R. Gu, W. Lei, J. Antoszewski, L. Faraone","doi":"10.1109/COMMAD.2014.7038660","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038660","url":null,"abstract":"Iodine (I) doping in mercury cadmium telluride (Hg<sub>1-x</sub>Cd<sub>x</sub>Te) grown by molecular beam epitaxy (MBE) on CdZnTe substrates with cadmium-iodide (CdI<sub>2</sub>) as the dopant source was investigated. I doping concentration in the samples was controlled by CdI<sub>2</sub> source temperature that varied in 110°C-150°C range. Depending upon I doping concentration, the electrical conductivity at 77K for as grown films varied in the 3×10<sup>3</sup> Ω<sup>-1</sup>m<sup>-1</sup> - 6×10<sup>4</sup> Ω<sup>-1</sup> m<sup>-1</sup> range and was about of six to ten orders of magnitude higher than those of non-doped HgCdTe films. The Hall coefficient showed classical n-type extrinsic behavior. The electron mobility for lower doping level was observed to be as high as that in an indium-doped material reported in literature [1]. The x-ray diffraction (XRD) studies revealed that there was no prominent change in crystal structure with increasing doping concentration. However, atomic force microscopy (AFM) measurements showed that dislocation densities and consequently defect concentration and size increased with increasing doping concentration.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133556240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An investigation of MWIR, AlInSb LEDs based on double heterostructures and multiple quantum wells 基于双异质结构和多量子阱的MWIR, AlInSb led的研究
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038668
Ying Ding, L. Meriggi, M. Steer, K. Bulashevich, I. Thayne, C. MacGregor, M. Sorel, C. Ironside
{"title":"An investigation of MWIR, AlInSb LEDs based on double heterostructures and multiple quantum wells","authors":"Ying Ding, L. Meriggi, M. Steer, K. Bulashevich, I. Thayne, C. MacGregor, M. Sorel, C. Ironside","doi":"10.1109/COMMAD.2014.7038668","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038668","url":null,"abstract":"Mid-infrared LEDs based on AlInSb double heterostrucutre and multiple quantum well active regions have been simulated and investigated using the SimuLED software package from STR. The simulation results indicate that the double heterostrucutre and multiple quantum well active regions offer higher carrier injection efficiency and energy conversion. This translates into an output power and wall-plug efficiency that are three and two times higher, respectively, than a conventional homojunction active region.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131893941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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