{"title":"表面等离子体增强AlN/GaN超晶格结构在紫外区的光发射","authors":"Johnny Tang, P. Reece","doi":"10.1109/COMMAD.2014.7038676","DOIUrl":null,"url":null,"abstract":"We report on the surface plasmon enhanced UV light emission from AlN/GaN superlattice structures grown on a c-plane sapphire substrate. An Al layer is selectively deposited on the top of the structures. Photoluminescence measurements from back side of the structures demonstrate output light intensity was enhanced at 291nm wavelength. This enhancement can be attributed to an increase in the spontaneous emission rate via resonance coupling between excitons in AlN/GaN superlattices and surface plasmons in the aluminum layer.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface plasmon enhanced light emission from AlN/GaN superlattices structure in the UV region\",\"authors\":\"Johnny Tang, P. Reece\",\"doi\":\"10.1109/COMMAD.2014.7038676\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the surface plasmon enhanced UV light emission from AlN/GaN superlattice structures grown on a c-plane sapphire substrate. An Al layer is selectively deposited on the top of the structures. Photoluminescence measurements from back side of the structures demonstrate output light intensity was enhanced at 291nm wavelength. This enhancement can be attributed to an increase in the spontaneous emission rate via resonance coupling between excitons in AlN/GaN superlattices and surface plasmons in the aluminum layer.\",\"PeriodicalId\":175863,\"journal\":{\"name\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2014.7038676\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2014.7038676","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Surface plasmon enhanced light emission from AlN/GaN superlattices structure in the UV region
We report on the surface plasmon enhanced UV light emission from AlN/GaN superlattice structures grown on a c-plane sapphire substrate. An Al layer is selectively deposited on the top of the structures. Photoluminescence measurements from back side of the structures demonstrate output light intensity was enhanced at 291nm wavelength. This enhancement can be attributed to an increase in the spontaneous emission rate via resonance coupling between excitons in AlN/GaN superlattices and surface plasmons in the aluminum layer.
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