K. Brookshire, M. Martyniuk, K. K. M. D. Dilusha Silva, Yinong Liu, L. Faraone
{"title":"长时间热处理下ICPCVD a-Si的长期稳定性","authors":"K. Brookshire, M. Martyniuk, K. K. M. D. Dilusha Silva, Yinong Liu, L. Faraone","doi":"10.1109/COMMAD.2014.7038680","DOIUrl":null,"url":null,"abstract":"Inductively coupled plasma enhanced chemical vapor deposited (ICPCVD) a-Si is used as a structural material in many microelectromechanical systems (MEMS). For a-Si to function as a sound structural component, the material must display long term mechanical stability. This paper evaluates the Young's modulus, hardness, and residual stress of a-Si under prolonged heat treatment. It is found that Young's modulus and hardness are not impacted by heat treatment, while the residual stress becomes more tensile with increased annealing time. Increased tensile stress is a result of hydrogen offgassing which can lead to improved film stability [1].","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Long-term stability of ICPCVD a-Si under prolonged heat treatment\",\"authors\":\"K. Brookshire, M. Martyniuk, K. K. M. D. Dilusha Silva, Yinong Liu, L. Faraone\",\"doi\":\"10.1109/COMMAD.2014.7038680\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Inductively coupled plasma enhanced chemical vapor deposited (ICPCVD) a-Si is used as a structural material in many microelectromechanical systems (MEMS). For a-Si to function as a sound structural component, the material must display long term mechanical stability. This paper evaluates the Young's modulus, hardness, and residual stress of a-Si under prolonged heat treatment. It is found that Young's modulus and hardness are not impacted by heat treatment, while the residual stress becomes more tensile with increased annealing time. Increased tensile stress is a result of hydrogen offgassing which can lead to improved film stability [1].\",\"PeriodicalId\":175863,\"journal\":{\"name\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2014.7038680\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2014.7038680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Long-term stability of ICPCVD a-Si under prolonged heat treatment
Inductively coupled plasma enhanced chemical vapor deposited (ICPCVD) a-Si is used as a structural material in many microelectromechanical systems (MEMS). For a-Si to function as a sound structural component, the material must display long term mechanical stability. This paper evaluates the Young's modulus, hardness, and residual stress of a-Si under prolonged heat treatment. It is found that Young's modulus and hardness are not impacted by heat treatment, while the residual stress becomes more tensile with increased annealing time. Increased tensile stress is a result of hydrogen offgassing which can lead to improved film stability [1].
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
