R. Ge, X. Hou, K. Brookshire, N. Krishnan, Dilusha Silva, J. Bumgarner, Yinong Liu, L. Faraone, M. Martyniuk
{"title":"偏靶离子束沉积制备Si1−xGex薄膜的纳米压痕","authors":"R. Ge, X. Hou, K. Brookshire, N. Krishnan, Dilusha Silva, J. Bumgarner, Yinong Liu, L. Faraone, M. Martyniuk","doi":"10.1109/COMMAD.2014.7038692","DOIUrl":null,"url":null,"abstract":"The mechanical properties of Si<sub>1-x</sub>Ge<sub>x</sub> thin films are studied via nanoindentation. The Si<sub>1-x</sub>Ge<sub>x</sub> thin films are prepared with a biased target ion beam deposition (BTIBD) method. We investigate the effect of varying the Si to Ge composition ratio on the elastic modulus and hardness of the resulting alloyed films. In comparison to pure BTIBD Si (E<sub>si</sub> = 154GPa, H<sub>si</sub> = 9.9GPa), for Si<sub>1-x</sub>Ge<sub>x</sub> a decreasing trend in Young's modulus and hardness is observed to be associated with the increase in Ge content, and for Si<sub>0.5</sub>Ge<sub>0.5</sub> the values of 139 GPa and 8.4GPa are found to represent the Young's modulus and hardness, respectively.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"100 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Nanoindentation of Si1−xGex thin films prepared by biased target ion beam deposition\",\"authors\":\"R. Ge, X. Hou, K. Brookshire, N. Krishnan, Dilusha Silva, J. Bumgarner, Yinong Liu, L. Faraone, M. Martyniuk\",\"doi\":\"10.1109/COMMAD.2014.7038692\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The mechanical properties of Si<sub>1-x</sub>Ge<sub>x</sub> thin films are studied via nanoindentation. The Si<sub>1-x</sub>Ge<sub>x</sub> thin films are prepared with a biased target ion beam deposition (BTIBD) method. We investigate the effect of varying the Si to Ge composition ratio on the elastic modulus and hardness of the resulting alloyed films. In comparison to pure BTIBD Si (E<sub>si</sub> = 154GPa, H<sub>si</sub> = 9.9GPa), for Si<sub>1-x</sub>Ge<sub>x</sub> a decreasing trend in Young's modulus and hardness is observed to be associated with the increase in Ge content, and for Si<sub>0.5</sub>Ge<sub>0.5</sub> the values of 139 GPa and 8.4GPa are found to represent the Young's modulus and hardness, respectively.\",\"PeriodicalId\":175863,\"journal\":{\"name\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"volume\":\"100 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2014.7038692\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2014.7038692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nanoindentation of Si1−xGex thin films prepared by biased target ion beam deposition
The mechanical properties of Si1-xGex thin films are studied via nanoindentation. The Si1-xGex thin films are prepared with a biased target ion beam deposition (BTIBD) method. We investigate the effect of varying the Si to Ge composition ratio on the elastic modulus and hardness of the resulting alloyed films. In comparison to pure BTIBD Si (Esi = 154GPa, Hsi = 9.9GPa), for Si1-xGex a decreasing trend in Young's modulus and hardness is observed to be associated with the increase in Ge content, and for Si0.5Ge0.5 the values of 139 GPa and 8.4GPa are found to represent the Young's modulus and hardness, respectively.
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