nBn T2SLs InAs/GaSb/B-AlGaSb HOT detector for fast frequency response operation

Abstract

This paper reports on response time of mid-wavelength infrared nBn detector based on type-II 10 Monolayer/10 Monolayer InAs/GaSb superlattice structure with Al_0.2Ga_0.8Sb barrier. The detector structure is simulated with the numerical platform APSYS by Crosslight Inc. A detailed analysis of response time as a function of bias is performed and compared to experimental nBn detector results and PIN type-II InAs/GaSb photodiode. Time response of the nBn detector with peak wavelength, λ_Peak = 4.4 μm at T = 200 K, V = 500 mV and series resistance, R_Series = 100 Ω is estimated τ_s ≈ 340 ps.