{"title":"隧道二极管与1060nm半导体激光器的混合集成","authors":"Junping Mi, Hongyan Yu, Huolei Wang, Shaoyang Tan, Wei-xi Chen, Ying Ding, Jiao-qing Pan","doi":"10.1109/COMMAD.2014.7038667","DOIUrl":null,"url":null,"abstract":"We report on a hybrid integrated tunneling diode, with a simple structure, and a quantum well laser diode, lasing at around 1060 nm, on GaAs substrate. The basic DC-characteristics of the integrated circuit was measured and analyzed. Obvious negative differential resistance regions were shown in the electrical and optical output. The device has potential applications in biomedicine and optical interconnects.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hybrid integration of a tunneling diode and a 1060-nm semiconductor laser\",\"authors\":\"Junping Mi, Hongyan Yu, Huolei Wang, Shaoyang Tan, Wei-xi Chen, Ying Ding, Jiao-qing Pan\",\"doi\":\"10.1109/COMMAD.2014.7038667\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on a hybrid integrated tunneling diode, with a simple structure, and a quantum well laser diode, lasing at around 1060 nm, on GaAs substrate. The basic DC-characteristics of the integrated circuit was measured and analyzed. Obvious negative differential resistance regions were shown in the electrical and optical output. The device has potential applications in biomedicine and optical interconnects.\",\"PeriodicalId\":175863,\"journal\":{\"name\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2014.7038667\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2014.7038667","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hybrid integration of a tunneling diode and a 1060-nm semiconductor laser
We report on a hybrid integrated tunneling diode, with a simple structure, and a quantum well laser diode, lasing at around 1060 nm, on GaAs substrate. The basic DC-characteristics of the integrated circuit was measured and analyzed. Obvious negative differential resistance regions were shown in the electrical and optical output. The device has potential applications in biomedicine and optical interconnects.
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