S. Naureen, N. Shahid, K. Vora, M. Lysevych, H. Tan, C. Jagadish, F. Karouta
{"title":"自顶向下制造带有欧姆金属触点的InP纳米线的方法","authors":"S. Naureen, N. Shahid, K. Vora, M. Lysevych, H. Tan, C. Jagadish, F. Karouta","doi":"10.1109/COMMAD.2014.7038636","DOIUrl":null,"url":null,"abstract":"Electrical contacts between metals and semiconductors are fundamentally important for practical semiconductor devices. This work reports the electrical characterization of nanowire arrays fabricated by a top-down approach, where electron beam lithography (EBL) and a highly anisotropic Cl2/H2/Ar inductively coupled plasma (ICP) reactive ion etching (RIE) is utilised to generate vertical arrays of InP nanowire arrays. Preliminary results show ohmic behavior from these arrays.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"174 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Top-down approach for fabricating InP nanowires with ohmic metal contacts\",\"authors\":\"S. Naureen, N. Shahid, K. Vora, M. Lysevych, H. Tan, C. Jagadish, F. Karouta\",\"doi\":\"10.1109/COMMAD.2014.7038636\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrical contacts between metals and semiconductors are fundamentally important for practical semiconductor devices. This work reports the electrical characterization of nanowire arrays fabricated by a top-down approach, where electron beam lithography (EBL) and a highly anisotropic Cl2/H2/Ar inductively coupled plasma (ICP) reactive ion etching (RIE) is utilised to generate vertical arrays of InP nanowire arrays. Preliminary results show ohmic behavior from these arrays.\",\"PeriodicalId\":175863,\"journal\":{\"name\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"volume\":\"174 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2014.7038636\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2014.7038636","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Top-down approach for fabricating InP nanowires with ohmic metal contacts
Electrical contacts between metals and semiconductors are fundamentally important for practical semiconductor devices. This work reports the electrical characterization of nanowire arrays fabricated by a top-down approach, where electron beam lithography (EBL) and a highly anisotropic Cl2/H2/Ar inductively coupled plasma (ICP) reactive ion etching (RIE) is utilised to generate vertical arrays of InP nanowire arrays. Preliminary results show ohmic behavior from these arrays.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
