InP-based radial heterostructures grown on [100] nanowires

2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-02-10 DOI:10.1109/COMMAD.2014.7038682

H. Fonseka, P. Caroff, Y. Guo, F. Wang, J. Wong-Leung, H. Tan, C. Jagadish

引用次数: 0

Abstract

InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.

查看原文本刊更多论文

[100]纳米线上生长的inp基径向异质结构

InP- inxga (1-x)As-InP量子阱管(QWT)结构生长在[100]取向的InP纳米线上。In摩尔分数，x在0和1之间变化。在[100]纳米线的{100}和{011}侧面形成八角形截面的表面上生长的量子阱是高度不均匀的。在室温下，从这些量子阱中可以观察到明亮的辐射。通过控制量子阱的厚度和组成，实现了近红外到中红外波段的带隙可调谐。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2014 Conference on Optoelectronic and Microelectronic Materials & Devices

自引率

0.00%

发文量