S. Mokkapati, D. Saxena, N. Jiang, H. Tan, C. Jagadish
{"title":"提高砷化镓纳米线辐射效率的等离子体腔","authors":"S. Mokkapati, D. Saxena, N. Jiang, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2014.7038702","DOIUrl":null,"url":null,"abstract":"We report a post-growth approach to increase the radiative recombination efficiency of GaAs nanowires, beyond what has been achieved using surface passivation. This is done by coupling the nanowires to resonant plasmonic nanocavities to reduce the radiative recombination lifetime of minority carriers, thereby increasing the radiative efficiency by an order of magnitude.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"231 1-2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Plasmonic cavities for increasing the radiative efficiency of GaAs nano wires\",\"authors\":\"S. Mokkapati, D. Saxena, N. Jiang, H. Tan, C. Jagadish\",\"doi\":\"10.1109/COMMAD.2014.7038702\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a post-growth approach to increase the radiative recombination efficiency of GaAs nanowires, beyond what has been achieved using surface passivation. This is done by coupling the nanowires to resonant plasmonic nanocavities to reduce the radiative recombination lifetime of minority carriers, thereby increasing the radiative efficiency by an order of magnitude.\",\"PeriodicalId\":175863,\"journal\":{\"name\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"volume\":\"231 1-2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2014.7038702\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2014.7038702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Plasmonic cavities for increasing the radiative efficiency of GaAs nano wires
We report a post-growth approach to increase the radiative recombination efficiency of GaAs nanowires, beyond what has been achieved using surface passivation. This is done by coupling the nanowires to resonant plasmonic nanocavities to reduce the radiative recombination lifetime of minority carriers, thereby increasing the radiative efficiency by an order of magnitude.