Strain simulation and MBE growth of CdTe on GaSb substrates

Abstract

In this paper, we present a study on ANSYS strain analysis and MBE growth of CdTe epilayers on GaSb substrates. The ANSYS simulation result shows that GaSb performs much better than other alternative substrates, e.g. GaAs. To verify the simulation results, CdTe buffer layers were grown by MBE on GaSb, which show material quality comparable to or slightly better than that on GaAs substrate. Furthermore, TEM study on the CdTe layers grown on GaSb indicates that fewer dislocations are generated around the interface between CdTe and GaSb, which accords with the simulation results. This preliminary study shows the great potential of GaSb to be next generation alternative substrates for growing high quality HgCdTe infrared materials.