热蒸发法制备CdTe太阳能电池用CdS薄膜的沉积加热效应

Won-Jae Lee, J. Sharp, G. Umana-Membreno, J. Dell, L. Faraone
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引用次数: 5

摘要

采用热蒸发法制备了硫化镉(cd)薄膜,比较了不同衬底温度对CdS/CdTe太阳能电池薄膜性能的影响。所研究的CdS沉积过程中的衬底温度范围为30°C(室温)至200°C。衬底温度的升高产生了高透明的CdS薄膜。然而,随着衬底温度的升高,载流子浓度的降低和迁移率的降低,电阻率显著增加。通过在不同的CdS沉积温度下制备CdS/CdTe太阳能电池,研究了CdS薄膜器件的光伏性能。CdS制备温度对开路电压有显著影响,开路电压随沉积温度的升高而降低。研究发现,室温沉积的CdTe薄膜具有更高的CdTe太阳能电池效率,因为在CdTe沉积过程中基片在330℃的加热同时改善了CdS薄膜的光学和电学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deposition heating effect on CdS thin films prepared by thermal evaporation for CdTe solar cells
Cadmium sulfide (CdS) thin films were prepared by thermal evaporation at different substrate temperature in order to compare their influence on properties of the films for CdS/CdTe solar cells. The investigated substrate temperature during CdS deposition was ranged from 30°C(room temperature) to 200°C. An increase in the substrate temperature yielded to highly transparent CdS thin films. However, the resistivity increased significantly with decrease of carrier concentration and mobility as substrate temperature increased. Photovoltaic properties of devices using the CdS thin films were investigated by fabricating CdS/CdTe solar cells at different CdS deposition temperature. CdS preparation temperature influenced significantly on open-circuit voltage which decreased with increasing deposition temperature. It is found that the CdTe solar cell using the CdS thin film deposited at room temperature had higher efficiency because substrate heating at 330°C during CdTe deposition also improved the optical and electrical properties of the CdS thin films simultaneously.
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