An investigation into signal stability during measurement of AlGaN/GaN transistor-based chemical sensors

Abstract

AlGaN/GaN transistor-based sensors are highly sensitive to changes in charge at the semiconductor-solution interface. Significant care controlling the measurement conditions is required for stable and robust sensor operation. In this study various aspects of measurement protocol were investigated in order to minimise the drift in sensor output during measurements. The most significant factors were found to be the use of buffered ionic solutions and the use of a Faraday cage.