F. L. Khir, A. Lyons, M. Myers, M. Baker, B. Nener, G. Parish
{"title":"基于AlGaN/GaN晶体管的化学传感器测量信号稳定性研究","authors":"F. L. Khir, A. Lyons, M. Myers, M. Baker, B. Nener, G. Parish","doi":"10.1109/COMMAD.2014.7038685","DOIUrl":null,"url":null,"abstract":"AlGaN/GaN transistor-based sensors are highly sensitive to changes in charge at the semiconductor-solution interface. Significant care controlling the measurement conditions is required for stable and robust sensor operation. In this study various aspects of measurement protocol were investigated in order to minimise the drift in sensor output during measurements. The most significant factors were found to be the use of buffered ionic solutions and the use of a Faraday cage.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An investigation into signal stability during measurement of AlGaN/GaN transistor-based chemical sensors\",\"authors\":\"F. L. Khir, A. Lyons, M. Myers, M. Baker, B. Nener, G. Parish\",\"doi\":\"10.1109/COMMAD.2014.7038685\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlGaN/GaN transistor-based sensors are highly sensitive to changes in charge at the semiconductor-solution interface. Significant care controlling the measurement conditions is required for stable and robust sensor operation. In this study various aspects of measurement protocol were investigated in order to minimise the drift in sensor output during measurements. The most significant factors were found to be the use of buffered ionic solutions and the use of a Faraday cage.\",\"PeriodicalId\":175863,\"journal\":{\"name\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2014.7038685\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2014.7038685","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An investigation into signal stability during measurement of AlGaN/GaN transistor-based chemical sensors
AlGaN/GaN transistor-based sensors are highly sensitive to changes in charge at the semiconductor-solution interface. Significant care controlling the measurement conditions is required for stable and robust sensor operation. In this study various aspects of measurement protocol were investigated in order to minimise the drift in sensor output during measurements. The most significant factors were found to be the use of buffered ionic solutions and the use of a Faraday cage.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
