2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献

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Leveraging accelerated testing to assess the reliability of two-stage and multi-channel drivers 利用加速测试来评估两级和多通道驱动器的可靠性
J. Davis, C. Perkins, A. Smith, Terry Clark, K. Mills
{"title":"Leveraging accelerated testing to assess the reliability of two-stage and multi-channel drivers","authors":"J. Davis, C. Perkins, A. Smith, Terry Clark, K. Mills","doi":"10.1109/EUROSIME.2017.7926224","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926224","url":null,"abstract":"The next wave of LED lighting technology is likely to be tunable white lighting (TWL) devices which can adjust the colour of the emitted light between warm white (∼ 2700 K) and cool white (∼ 6500 K). This type of lighting system uses LED assemblies of two or more colours each controlled by separate driver channels that independently adjust the current levels to achieve the desired lighting colour. Drivers used in TWL devices are inherently more complex than those found in simple SSL devices, due to the number of electrical components in the driver required to achieve this level of control. The reliability of such lighting systems can only be studied using accelerated stress tests (AST) that accelerate the aging process to time frames that can be accommodated in laboratory testing. This paper describes AST methods and findings developed from AST data that provide insights into the lifetime of the main components of one-channel and multi-channel LED devices. The use of AST protocols to confirm product reliability is necessary to ensure that the technology can meet the performance and lifetime requirements of the intended application.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"354 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132617046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lifetime prediction based on analytical multi-physics simulation for light-emitting diode (LED) systems 基于解析式多物理场仿真的发光二极管寿命预测
Xi Yang, Zili Wang, Yi Ren, Bo Sun, C. Qian
{"title":"Lifetime prediction based on analytical multi-physics simulation for light-emitting diode (LED) systems","authors":"Xi Yang, Zili Wang, Yi Ren, Bo Sun, C. Qian","doi":"10.1109/EUROSIME.2017.7926233","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926233","url":null,"abstract":"A novel method based on the analytical multi-physics simulation to predict the lifetime for LED systems is presented in this paper. LED is a typical multidisciplinary system that transfers electrical input into photonic output, and lifetime prediction is a must for new electronic device before releasing to market. The lifetime feature of LED systems is closely connected to the power, thermal, and optical parameters, but there is rare method concerning all these features to conduct lifetime prediction. In this paper, an original concept, Lumen Impulse (referred as LI), is proposed, which combines the lifetime and performance parameters together to indicate the accumulation of luminous flux in the time domain. With LI being regarded as an objective function, multidisciplinary design optimization (MDO) method is employed to solve the coupling formulas, the lifetime with higher precision can be obtained subsequently. The impacts of certain design parameters in LED systems on the lifetime and LI are discussed to present suggestions for the enhancement of lifetime performance of the LED systems. This research result will be helpful for manufactures and designers to predict the lifetime with higher accuracy and determine a most qualified operating point of LED systems.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121276984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A PoF and statistics combined reliability prediction for LED arrays in lamps 基于PoF和统计相结合的灯具LED阵列可靠性预测方法
Bo Sun, Xuejun Fan, Jiajie Fan, C. Qian, G.Q. Zhang
{"title":"A PoF and statistics combined reliability prediction for LED arrays in lamps","authors":"Bo Sun, Xuejun Fan, Jiajie Fan, C. Qian, G.Q. Zhang","doi":"10.1109/EUROSIME.2017.7926264","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926264","url":null,"abstract":"In this work, a physics-of-failure (PoF) reliability prediction methodology is combined with statistical models to consider the interaction between the lumen depreciation and catastrophic failures of LEDs. The current in each LED may redistribute when the catastrophic failure occurs in one of LEDs in an array, thus affecting the operation conditions of the entire LED array. A physics-of-failure based reliability prediction methodology is combined with statistical models to consider the interaction between the lumen depreciation and the catastrophic failure. Electronic-thermal simulations are utilized to obtain operation conditions, including temperature and current. Meanwhile, statistical models are applied to calculate possibilities of the catastrophic failure in different operation conditions.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121319633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact of wire material and fluorine in dielectric on wire Pull Test stress 导线材料和介质中氟对导线拉拔试验应力的影响
R. Sethu, Christian Schirrmann, H. U. Ha, K. Soon
{"title":"Impact of wire material and fluorine in dielectric on wire Pull Test stress","authors":"R. Sethu, Christian Schirrmann, H. U. Ha, K. Soon","doi":"10.1109/EUROSIME.2017.7926227","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926227","url":null,"abstract":"The move towards low-k dielectrics and change of wire material from gold (Au) to copper (Cu) is being driven by the need for lower resistive-capacitive (RC) delay in circuits and cost. But this can increase the incidence of bond pad lifting. Finite element analysis (FEA) stress simulation prior to mass production can provide an insight to the probability of such failures and guide device manufacturers to focus their efforts on factors that are significant. In this work, it was discovered that the change in wire material has a higher impact to back end of line (BEOL) structure's first principal stress compared to the change in the low-k dielectric material properties.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128257748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design optimization for a power package by simulation 基于仿真的电源封装设计优化
H. Fan, W. Chow, Pompeo V Umali, F. Wong, Kai Zhang, Haibin Chen, Jingshen Wu
{"title":"Design optimization for a power package by simulation","authors":"H. Fan, W. Chow, Pompeo V Umali, F. Wong, Kai Zhang, Haibin Chen, Jingshen Wu","doi":"10.1109/EUROSIME.2017.7926249","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926249","url":null,"abstract":"As one of challenges, clip design for bonding area is becoming smaller and smaller to achieve die size requirement, better view inspection and efficient solder flux cleaning. However, with a small bonding area, there will be a concern on high thermal resistance during working condition, especially under a surge current, in which junction temperature may be higher than the melting temperature of soft solder, i.e. 298 °C, resulting in a potential concern of package reliability. Therefore, design optimization has to be done to reduce the risk on reliability as low as possible. In this study, different clip designs are proposed and effect of clip tip, die pad size and die size on junction temperature under surge test are studies. Simulation data show that clip design is the only key for device to pass surge test without any soft solder melting issue. A clip design guideline is thereafter provided with that making clip tip small as possible for better view inspection and solder flux cleaning, but also keeping a good thermal performance to pass surge test without reliability concerns.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"379 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121405131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Model evaluation and improvement for commercially available silicon carbide power MOSFETs 商用碳化硅功率mosfet的模型评估和改进
Andrii Stefanskyi, Ł. Starzak, A. Napieralski
{"title":"Model evaluation and improvement for commercially available silicon carbide power MOSFETs","authors":"Andrii Stefanskyi, Ł. Starzak, A. Napieralski","doi":"10.1109/EUROSIME.2017.7926282","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926282","url":null,"abstract":"Silicon carbide MOSFETs coming from every manufacturer selling on the market have been simulated using models provided by the respective manufacturers. Simulation results have been compared to datasheet characteristics. Discrepancies were identified and their possible causes have been investigated. This has been complemented with an analysis of each model structure. For model improvement, several approaches have been considered: modification of model parameter values (parameter re-extraction); modification of model circuit equations (e.g. additional coefficients, changes to implemented laws); using a completely different model structure.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116932963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analyzing delamination in ASIC packages 分析ASIC封装中的分层
G. Pecanac, C. Silber, K. Kosbi, L. Vollmer, M. Wiedenmann, T. von Bargen, A. Fischer
{"title":"Analyzing delamination in ASIC packages","authors":"G. Pecanac, C. Silber, K. Kosbi, L. Vollmer, M. Wiedenmann, T. von Bargen, A. Fischer","doi":"10.1109/EUROSIME.2017.7926219","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926219","url":null,"abstract":"The reliability of microelectronic devices is often limited by internal local delamination that occurs between the polyimide layer and the re-distribution top metal layer on the chip surface during temperature cycle testing. In order to design reliable microelectronic packages and to avoid additional delay and cost of potential re-designs, such effects should be thoroughly analyzed, understood and avoided already in the design phase of the product.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121028482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation on the temperature distribution of integrated heater configurations in a Lab-on-a-Chip system 芯片实验室系统中集成加热器配置的温度分布研究
Petra Streit, J. Nestler, R. Schulze, A. Shaporin, T. Otto
{"title":"Investigation on the temperature distribution of integrated heater configurations in a Lab-on-a-Chip system","authors":"Petra Streit, J. Nestler, R. Schulze, A. Shaporin, T. Otto","doi":"10.1109/EUROSIME.2017.7926229","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926229","url":null,"abstract":"Lab-on-a-Chip (LoC) systems offer the opportunity of fast and customized biological analyses executed at the “point-of-need” without expensive lab equipment. Some biological processes need a temperature treatment, therefore a technology platform with an integrated heating functionality has been previously described. It is important to ensure stable and homogeneous thermal conditions for biological reactions in the respective biosensor area. Targeting a good homogeneity of the temperature distribution in the sensor area, the use of multiple heaters is beneficial to control the position and shape of hot spots during heating.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132131674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Characterization of epoxy based highly filled die attach materials in microelectronics 微电子领域环氧基高填充贴片材料的表征
I. Maus, C. Liebl, M. Fink, D. Vu, M. Hartung, H. Preu, K. Jansen, B. Michel, B. Wunderle, L. Weiss
{"title":"Characterization of epoxy based highly filled die attach materials in microelectronics","authors":"I. Maus, C. Liebl, M. Fink, D. Vu, M. Hartung, H. Preu, K. Jansen, B. Michel, B. Wunderle, L. Weiss","doi":"10.1109/EUROSIME.2017.7926237","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926237","url":null,"abstract":"In semiconductor technologies thermally and electrically conductive adhesives are widely used to attach the die to the substrate. Focus of this work are Isotropic Conductive Adhesives (ICA) with a high amount of electrically conductive filler particles and the characterization of such materials.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116339809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An AlAs/germanene heterostructure with outstanding tunability of electronic properties 一种具有优异电子可调性的AlAs/germanene异质结构
Chun-Jian Tan, Qun Yang, H. Ye, Xianping Chen, G. Q. Zhang
{"title":"An AlAs/germanene heterostructure with outstanding tunability of electronic properties","authors":"Chun-Jian Tan, Qun Yang, H. Ye, Xianping Chen, G. Q. Zhang","doi":"10.1109/EUROSIME.2017.7926298","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926298","url":null,"abstract":"By means of comprehensive first-principles calculations, we investigate the stability and electronic properties of AlAs/germanene heterostructures. Especially, electric field and strain are used to tailor its electronic band gap. The binding energy and interlayer distance indicate that germanene and AlAs monolayers in AAI pattern are bound together via van der Waals interaction with a maximum indirect-gap of 0.494 eV, which is expected to has potential application in the field of field-effect transistors. Under the negative E-field and compressive strain, the bandgaps of the AAI-stacking show a near-linear and linear decrease behavior respectively, whereas the response of the bandgaps to the positive E-field and tensile strain displays a dramatic and monotonous decrease relationship. All these nontrivial and tunable properties endow AlAs/germanene nanocomposite great potentials for FETs, strain sensors, and photonic devices.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125332734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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