商用碳化硅功率mosfet的模型评估和改进

2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2017-04-01 DOI:10.1109/EUROSIME.2017.7926282

Andrii Stefanskyi, Ł. Starzak, A. Napieralski

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引用次数: 1

摘要

来自市场上销售的每个制造商的碳化硅mosfet已经使用各自制造商提供的模型进行了模拟。仿真结果与数据表特性进行了比较。发现了差异，并调查了可能的原因。此外，还对每个模型结构进行了分析。对于模型改进，考虑了几种方法:修改模型参数值(参数重新提取);修改模型电路方程(如增加系数，改变实施定律);使用完全不同的模型结构。

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Model evaluation and improvement for commercially available silicon carbide power MOSFETs

Silicon carbide MOSFETs coming from every manufacturer selling on the market have been simulated using models provided by the respective manufacturers. Simulation results have been compared to datasheet characteristics. Discrepancies were identified and their possible causes have been investigated. This has been complemented with an analysis of each model structure. For model improvement, several approaches have been considered: modification of model parameter values (parameter re-extraction); modification of model circuit equations (e.g. additional coefficients, changes to implemented laws); using a completely different model structure.

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2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

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