Model evaluation and improvement for commercially available silicon carbide power MOSFETs

Abstract

Silicon carbide MOSFETs coming from every manufacturer selling on the market have been simulated using models provided by the respective manufacturers. Simulation results have been compared to datasheet characteristics. Discrepancies were identified and their possible causes have been investigated. This has been complemented with an analysis of each model structure. For model improvement, several approaches have been considered: modification of model parameter values (parameter re-extraction); modification of model circuit equations (e.g. additional coefficients, changes to implemented laws); using a completely different model structure.