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Altitude and underground real-time SER characterization of CMOS 65nm SRAM CMOS 65nm SRAM的高空和地下实时SER表征
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2008.5782774
J. Autran, P. Roche, S. Sauze, G. Gasiot, D. Munteanu, P. Loaiza, M. Zampaolo, J. Borel
{"title":"Altitude and underground real-time SER characterization of CMOS 65nm SRAM","authors":"J. Autran, P. Roche, S. Sauze, G. Gasiot, D. Munteanu, P. Loaiza, M. Zampaolo, J. Borel","doi":"10.1109/radecs.2008.5782774","DOIUrl":"https://doi.org/10.1109/radecs.2008.5782774","url":null,"abstract":"We report real-time SER characterization of CMOS 65nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130nm technology.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114628379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Multi level RTS in proton irradiated CMOS image sensors manufactured in deep submicron technology 用深亚微米技术制造的质子辐照CMOS图像传感器中的多级RTS
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2008.5782739
V. Goiffon, G. Hopkinson, P. Magnan, F. Bernard, G. Roland, O. Saint-Pé
{"title":"Multi level RTS in proton irradiated CMOS image sensors manufactured in deep submicron technology","authors":"V. Goiffon, G. Hopkinson, P. Magnan, F. Bernard, G. Roland, O. Saint-Pé","doi":"10.1109/radecs.2008.5782739","DOIUrl":"https://doi.org/10.1109/radecs.2008.5782739","url":null,"abstract":"A new automated method able to detect multi level random telegraph signals in pixel arrays and to extract their main characteristics is presented. The proposed method is applied to several proton irradiated pixel arrays manufactured using a 0.18 μm CMOS process dedicated to imaging. Despite the large proton energy range and the large fluence range used, similar exponential RTS amplitude distributions are observed. A universal mean amplitude is extracted from these distributions and the number of RTS defects appears to scale well with total NIEL. These conclusions allow the prediction of RTS amplitude distributions. The effect of electric field on RTS amplitude is also studied and no significant relation between electric field and RTS amplitude is observed.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130424913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Analysis of turbo decoder robustness against SEU effects turbo解码器对SEU效应的鲁棒性分析
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2008.5944060
M. Portela-García, C. López-Ongil, M. García-Valderas, L. Entrena, B. Lestriez, L. Berrojo
{"title":"Analysis of turbo decoder robustness against SEU effects","authors":"M. Portela-García, C. López-Ongil, M. García-Valderas, L. Entrena, B. Lestriez, L. Berrojo","doi":"10.1109/radecs.2008.5944060","DOIUrl":"https://doi.org/10.1109/radecs.2008.5944060","url":null,"abstract":"Wireless communications were clearly enhanced since 90's thanks to Turbo Codes. The use of these codes in satellites and deep-space exploration could be ruined if radiation effects exceed their correction capability. SEU sensitivity of a Turbo Decoder intended for space applications has been analyzed in detail, injecting millions of faults by means of using an Autonomous Emulation System. Specifically, around 34.5 Mfaults per test in a sweep for four different parameters have been injected.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"4648 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121516269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heavy ion irradiation effects on capacitors with SiO2 and ONO as dielectrics 重离子辐照对SiO2和ONO介质电容器的影响
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2008.5782761
A. Gasperin, A. Paccagnella, G. Ghidini, A. Sebastiani
{"title":"Heavy ion irradiation effects on capacitors with SiO2 and ONO as dielectrics","authors":"A. Gasperin, A. Paccagnella, G. Ghidini, A. Sebastiani","doi":"10.1109/radecs.2008.5782761","DOIUrl":"https://doi.org/10.1109/radecs.2008.5782761","url":null,"abstract":"We study heavy ion irradiation effects on capacitors with the structure of a Floating Gate Flash cell. We demonstrate that the modifications of the capacitors electrical characteristics observed after irradiation depend on the physical position of the defects produced by ions into the dielectric. In particular, we focus our attention on the leakage current produced by ion irradiation. We evidence that SiO2 capacitors feature a leakage current higher than that observed in capacitors with an Oxide-Nitride-Oxide (ONO) stack as dielectric. Finally, we investigate the behavior in time of the leakage produced by ions.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129457997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
3-D simulation analysis of bipolar amplification in Planar Double-Gate and FinFET with independent gates 平面双栅极和独立栅极FinFET双极放大的三维仿真分析
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2008.5782727
D. Munteanu, J. Autran, M. Moreau
{"title":"3-D simulation analysis of bipolar amplification in Planar Double-Gate and FinFET with independent gates","authors":"D. Munteanu, J. Autran, M. Moreau","doi":"10.1109/radecs.2008.5782727","DOIUrl":"https://doi.org/10.1109/radecs.2008.5782727","url":null,"abstract":"The bipolar amplification and charge collection of Planar Double-Gate and FinFET with independent gates is simulated. The transient response of independent gate devices is compared to that of conventional devices having the gates tied together.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132796187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Packaging effects on radFET sensors for high energy physics experiments 高能物理实验中radFET传感器的封装效应
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2008.5944062
Jade Mekki, M. Moll, M. Glaser, S. Guatelli, M. Pia, F. Ravotti, L. Dusseau
{"title":"Packaging effects on radFET sensors for high energy physics experiments","authors":"Jade Mekki, M. Moll, M. Glaser, S. Guatelli, M. Pia, F. Ravotti, L. Dusseau","doi":"10.1109/radecs.2008.5944062","DOIUrl":"https://doi.org/10.1109/radecs.2008.5944062","url":null,"abstract":"RadFETs in customized chip carrier packages are installed in the LHC Experiments as radiation monitors. The package influence on the dose measurement in the complex LHC radiation environment is evaluated using Geant4 simulations and experimental data.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125161709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
TID sensitivity of NAND Flash memory building blocks NAND闪存构建块的TID灵敏度
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2008.5782680
M. Bagatin, G. Cellere, S. Gerardin, A. Paccagnella, A. Visconti, S. Beltrami
{"title":"TID sensitivity of NAND Flash memory building blocks","authors":"M. Bagatin, G. Cellere, S. Gerardin, A. Paccagnella, A. Visconti, S. Beltrami","doi":"10.1109/radecs.2008.5782680","DOIUrl":"https://doi.org/10.1109/radecs.2008.5782680","url":null,"abstract":"NAND Flash memories are the leader among high capacity non-volatile memory technologies and are becoming attractive also for radiation harsh environments, such as space. For these applications, a careful assessment of their sensitivity to radiation is needed. In this contribution we analyze TID effects on the many different building blocks of NAND Flash memories, including the charge pumps, row-decoder, and floating gate array. Since each of these elements have dedicated circuital and technological characteristics, we identify and study the peculiar failure mode for each part.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130282087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Transient response of 3-D Multi-Channel nanowire MOSFETs submitted to heavy ion irradiation: A 3-D simulation study 三维多通道纳米线mosfet在重离子辐照下的瞬态响应:三维模拟研究
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2008.5782711
D. Munteanu, J. Autran
{"title":"Transient response of 3-D Multi-Channel nanowire MOSFETs submitted to heavy ion irradiation: A 3-D simulation study","authors":"D. Munteanu, J. Autran","doi":"10.1109/radecs.2008.5782711","DOIUrl":"https://doi.org/10.1109/radecs.2008.5782711","url":null,"abstract":"The response to single-event of 3-D Multi-Channel nanowire MOSFETs is investigated by 3-D numerical simulation. Drain current transient and charge collection are analyzed as function of the ion strike location, direction and track radius.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132700343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The path and challenges to 90nm radiation hardened technology 90nm辐射硬化技术的路径和挑战
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2008.5782725
N. Haddad, E. Chan, S. Doyle, A. Kelly, R. Lawrence, D. Lawson, D. Patel, J. Ross
{"title":"The path and challenges to 90nm radiation hardened technology","authors":"N. Haddad, E. Chan, S. Doyle, A. Kelly, R. Lawrence, D. Lawson, D. Patel, J. Ross","doi":"10.1109/radecs.2008.5782725","DOIUrl":"https://doi.org/10.1109/radecs.2008.5782725","url":null,"abstract":"Preliminary radiation effects analysis on a commercial 90nm CMOS process has been performed to evaluate hardness potential from a process and design perspective, and to identify techniques to promote radiation hardness enhancement towards achieving suitability for low power space applications.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133718984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation tolerance tests of small-sized CsI(Tl) scintillators coupled to photodiodes 与光电二极管耦合的小型CsI(Tl)闪烁体的辐射耐受性试验
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2008.5782741
E. Valtonen, J. Peltonen, O. Dudnik, A. M. Kudin, H. Andersson, Yu.A. Borodenko, T. Eronen, J. Huovelin, H. Kettunen, E. Kurbatov, J. Lehti, S. Nenonen, M. Rossi, R. Vainio, A. Virtanen
{"title":"Radiation tolerance tests of small-sized CsI(Tl) scintillators coupled to photodiodes","authors":"E. Valtonen, J. Peltonen, O. Dudnik, A. M. Kudin, H. Andersson, Yu.A. Borodenko, T. Eronen, J. Huovelin, H. Kettunen, E. Kurbatov, J. Lehti, S. Nenonen, M. Rossi, R. Vainio, A. Virtanen","doi":"10.1109/radecs.2008.5782741","DOIUrl":"https://doi.org/10.1109/radecs.2008.5782741","url":null,"abstract":"Radiation tolerance of small-sized CsI(Tl) crystals coupled to silicon photodiodes was studied by using protons. Irradiations up to the fluence of 1012 protons/cm2 were used. Degradation of light output by less than 5% was achieved.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131835117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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