Transient response of 3-D Multi-Channel nanowire MOSFETs submitted to heavy ion irradiation: A 3-D simulation study

2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI:10.1109/radecs.2008.5782711

D. Munteanu, J. Autran

引用次数: 0

Abstract

The response to single-event of 3-D Multi-Channel nanowire MOSFETs is investigated by 3-D numerical simulation. Drain current transient and charge collection are analyzed as function of the ion strike location, direction and track radius.

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三维多通道纳米线mosfet在重离子辐照下的瞬态响应:三维模拟研究

采用三维数值模拟方法研究了三维多通道纳米线mosfet的单事件响应。分析了漏极电流暂态和电荷收集随离子撞击位置、方向和轨迹半径的变化规律。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 European Conference on Radiation and Its Effects on Components and Systems

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