90nm辐射硬化技术的路径和挑战

2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI:10.1109/radecs.2008.5782725

N. Haddad, E. Chan, S. Doyle, A. Kelly, R. Lawrence, D. Lawson, D. Patel, J. Ross

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引用次数: 1

摘要

对商用90nm CMOS工艺进行了初步的辐射效应分析，从工艺和设计的角度评估了硬度潜力，并确定了促进辐射硬度增强的技术，以实现低功耗空间应用的适用性。

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The path and challenges to 90nm radiation hardened technology

Preliminary radiation effects analysis on a commercial 90nm CMOS process has been performed to evaluate hardness potential from a process and design perspective, and to identify techniques to promote radiation hardness enhancement towards achieving suitability for low power space applications.

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来源期刊

2008 European Conference on Radiation and Its Effects on Components and Systems

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