N. Haddad, E. Chan, S. Doyle, A. Kelly, R. Lawrence, D. Lawson, D. Patel, J. Ross
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引用次数: 1
Abstract
Preliminary radiation effects analysis on a commercial 90nm CMOS process has been performed to evaluate hardness potential from a process and design perspective, and to identify techniques to promote radiation hardness enhancement towards achieving suitability for low power space applications.