The path and challenges to 90nm radiation hardened technology

N. Haddad, E. Chan, S. Doyle, A. Kelly, R. Lawrence, D. Lawson, D. Patel, J. Ross
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引用次数: 1

Abstract

Preliminary radiation effects analysis on a commercial 90nm CMOS process has been performed to evaluate hardness potential from a process and design perspective, and to identify techniques to promote radiation hardness enhancement towards achieving suitability for low power space applications.
90nm辐射硬化技术的路径和挑战
对商用90nm CMOS工艺进行了初步的辐射效应分析,从工艺和设计的角度评估了硬度潜力,并确定了促进辐射硬度增强的技术,以实现低功耗空间应用的适用性。
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