与光电二极管耦合的小型CsI(Tl)闪烁体的辐射耐受性试验

2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI:10.1109/radecs.2008.5782741

E. Valtonen, J. Peltonen, O. Dudnik, A. M. Kudin, H. Andersson, Yu.A. Borodenko, T. Eronen, J. Huovelin, H. Kettunen, E. Kurbatov, J. Lehti, S. Nenonen, M. Rossi, R. Vainio, A. Virtanen

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引用次数: 2

摘要

利用质子研究了与硅光电二极管耦合的小尺寸CsI(Tl)晶体的耐辐射性能。辐照强度可达1012个质子/平方厘米。光输出的衰减小于5%。

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Radiation tolerance tests of small-sized CsI(Tl) scintillators coupled to photodiodes

Radiation tolerance of small-sized CsI(Tl) crystals coupled to silicon photodiodes was studied by using protons. Irradiations up to the fluence of 1012 protons/cm2 were used. Degradation of light output by less than 5% was achieved.

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2008 European Conference on Radiation and Its Effects on Components and Systems

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