3-D simulation analysis of bipolar amplification in Planar Double-Gate and FinFET with independent gates

2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI:10.1109/radecs.2008.5782727

D. Munteanu, J. Autran, M. Moreau

引用次数: 10

Abstract

The bipolar amplification and charge collection of Planar Double-Gate and FinFET with independent gates is simulated. The transient response of independent gate devices is compared to that of conventional devices having the gates tied together.

查看原文本刊更多论文

平面双栅极和独立栅极FinFET双极放大的三维仿真分析

对具有独立栅极的平面双栅极和FinFET的双极放大和电荷收集进行了仿真。将独立栅极装置的瞬态响应与将栅极捆绑在一起的传统装置的瞬态响应进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2008 European Conference on Radiation and Its Effects on Components and Systems

自引率

0.00%

发文量