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Factors impacting the temperature dependence of soft errors in commercial SRAMs 影响商用sram软误差温度依赖性的因素
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI: 10.1109/RADECS.2008.5782693
M. Bagatin, S. Gerardin, A. Paccagnella, Carla Andreani, Giuseppe Gorini, A. Pietropaolo, S. Platt, Christopher Frost
{"title":"Factors impacting the temperature dependence of soft errors in commercial SRAMs","authors":"M. Bagatin, S. Gerardin, A. Paccagnella, Carla Andreani, Giuseppe Gorini, A. Pietropaolo, S. Platt, Christopher Frost","doi":"10.1109/RADECS.2008.5782693","DOIUrl":"https://doi.org/10.1109/RADECS.2008.5782693","url":null,"abstract":"We performed neutron and alpha-particle irradiation to reproduce the effects of the terrestrial environment on several commercial SRAMs manufactured by different vendors. We observed that, depending on the tested vendor, the number of errors either increases or slightly decreases for rising temperature, even in devices belonging to the same technology node. SPICE simulations were then used to investigate the temperature dependence of parameters like the feedback time and restoring current of the cell. The shape and magnitude of the particle-induced transient current was discussed as a function of temperature. The variability in the temperature response was attributed to the balance of contrasting factors, such as cell slowing down and increased diffusion collection with increasing temperature.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121949671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET 中压功率MOSFET单事件门损伤的三维仿真研究
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI: 10.1109/RADECS.2008.5782713
A. Porzio, F. Velardi, G. Busatto, F. Iannuzzo, A. Sanseverino, G. Currò
{"title":"A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET","authors":"A. Porzio, F. Velardi, G. Busatto, F. Iannuzzo, A. Sanseverino, G. Currò","doi":"10.1109/RADECS.2008.5782713","DOIUrl":"https://doi.org/10.1109/RADECS.2008.5782713","url":null,"abstract":"In this paper we present a 3-D simulation study, based on experimental observation, which describes the role played by the strong increase of the electric field in the occurrence of gate damages induced by an heavy ion impact on typical medium power MOSFET devices.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121474592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Multiple SEU tolerance in LUTs of FPGAs using protected schemes 使用保护方案的fpga的lut中的多个SEU容忍度
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI: 10.1109/RADECS.2008.5782736
C. Argyrides, H. Zarandi, D. Pradhan
{"title":"Multiple SEU tolerance in LUTs of FPGAs using protected schemes","authors":"C. Argyrides, H. Zarandi, D. Pradhan","doi":"10.1109/RADECS.2008.5782736","DOIUrl":"https://doi.org/10.1109/RADECS.2008.5782736","url":null,"abstract":"Multiple upsets would be available in SRAM-based FPGAs which utilizes SRAM in different parts to implement circuit configuration and to implement circuit data. Moreover, configuration bits of SRAM-based FPGAs are more sensible to upsets compared to circuit data due to significant number of SRAM bits. In this paper, a new protected CLB and FPGA architecture is proposed which utilize multiple error correction (DEC) and multiple error detection. This is achieved by the incorporation of recently proposed coding technique Matrix code [13] in the FPGA. The power and area analysis of the proposed techniques show that these methods are more efficient than the traditional schemes such as duplication with comparison and TMR circuit design in the FPGAs.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131029072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Proton radiation test of DC/DC converter with high voltage output 高压输出DC/DC变换器质子辐射试验
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI: 10.1109/RADECS.2008.5782686
S. Scherrer, W. Hajdas, U. Grossner, N. Schlumpf
{"title":"Proton radiation test of DC/DC converter with high voltage output","authors":"S. Scherrer, W. Hajdas, U. Grossner, N. Schlumpf","doi":"10.1109/RADECS.2008.5782686","DOIUrl":"https://doi.org/10.1109/RADECS.2008.5782686","url":null,"abstract":"Radiation hardness of the COTS high voltage DC-DC converter was tested up to 90 krad(Si) using proton beams. Total dose effects with subsequent annealing were determined. Dependence on operating conditions and dose rate was observed. Mainly responsible parts were identified and functional failure of the device was attributed to the input current increase driven by power MOSFET.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123903124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Charge-coupled device proton-induced degradation observed on low earth orbit star tracker 近地轨道星跟踪器上电荷耦合装置质子诱导退化的观测
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI: 10.1109/RADECS.2008.5782745
M. Beaumé, D. Hervé, L. Paganelli-Pradere
{"title":"Charge-coupled device proton-induced degradation observed on low earth orbit star tracker","authors":"M. Beaumé, D. Hervé, L. Paganelli-Pradere","doi":"10.1109/RADECS.2008.5782745","DOIUrl":"https://doi.org/10.1109/RADECS.2008.5782745","url":null,"abstract":"On the SPOT5 satellite, in-flight degradation of the SED16 star tracker CCD is presented and compared to the predictions of existing models. Dark current distribution and charge transfer inefficiency at end of mission are found to be within expectations.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124807525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design, assessment and modeling of an integrated 0.4 µm SiGe Bipolar VCSEL driver under γ-radiation γ辐射下集成0.4 μ m SiGe双极VCSEL驱动器的设计、评估和建模
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI: 10.1109/RADECS.2008.5782683
P. Leroux, W. De Cock, M. Van Uffelen, M. Steyaert
{"title":"Design, assessment and modeling of an integrated 0.4 µm SiGe Bipolar VCSEL driver under γ-radiation","authors":"P. Leroux, W. De Cock, M. Van Uffelen, M. Steyaert","doi":"10.1109/RADECS.2008.5782683","DOIUrl":"https://doi.org/10.1109/RADECS.2008.5782683","url":null,"abstract":"This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4μm, which is part of the device library in a commercial 0.35μm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"PP 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126359130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Influences of cluster related defects on silicon detector properties 簇相关缺陷对硅探测器性能的影响
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI: 10.1109/RADECS.2008.5782768
A. Junkes, E. Fretwurst, I. Pintilie
{"title":"Influences of cluster related defects on silicon detector properties","authors":"A. Junkes, E. Fretwurst, I. Pintilie","doi":"10.1109/RADECS.2008.5782768","DOIUrl":"https://doi.org/10.1109/RADECS.2008.5782768","url":null,"abstract":"The influence of proton induced cluster defects on reverse current in n-type silicon diodes combined with annealing studies acquiring the properties of bistable cluster related defects measured by DLTS and TSC.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134628935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The effects of proton irradiation on coolrunner-II - CPID technology 质子辐照对冷却器- ii - CPID技术的影响
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI: 10.1109/RADECS.2008.5944064
M. García-Valderas, M. Portela-García, C. López-Ongil, L. Entrena, A. Martín-Ortega, J. R. de Mingo, M. Álvarez, S. Esteve, S. Rodriguez
{"title":"The effects of proton irradiation on coolrunner-II - CPID technology","authors":"M. García-Valderas, M. Portela-García, C. López-Ongil, L. Entrena, A. Martín-Ortega, J. R. de Mingo, M. Álvarez, S. Esteve, S. Rodriguez","doi":"10.1109/RADECS.2008.5944064","DOIUrl":"https://doi.org/10.1109/RADECS.2008.5944064","url":null,"abstract":"Nowadays, Complex Programmable Devices are highly demanded in space missions. In this sense, CoolRunner-II devices are very attractive due to their low-power consumption. However, there is no report on proton sensitivity for this technology until date. In this work proton irradiation tests were performed on these devices in the energy range from 6 to 63 MeV in both static and dynamic modes. The results reported allow considering these devices suitable for space applications.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130264575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Automatic insertion of selective TMR for SEU mitigation 自动插入选择性TMR以缓解SEU
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI: 10.1109/RADECS.2008.5782728
Ó. Ruano, P. Reviriego, J. A. Maestro
{"title":"Automatic insertion of selective TMR for SEU mitigation","authors":"Ó. Ruano, P. Reviriego, J. A. Maestro","doi":"10.1109/RADECS.2008.5782728","DOIUrl":"https://doi.org/10.1109/RADECS.2008.5782728","url":null,"abstract":"In this paper, a methodology is presented to perform automatic selective TMR insertion on digital circuits, having as a constraint the required reliability level. Such reliability is guaranteed while reducing the area compared with TMR.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124769796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A technique to calculate the MBU distribution of a memory under radiation suffering the event accumulation problem 具有事件累积问题的辐射下存储器MBU分布的计算方法
2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI: 10.1109/RADECS.2008.5782750
P. Reviriego, J. A. Maestro
{"title":"A technique to calculate the MBU distribution of a memory under radiation suffering the event accumulation problem","authors":"P. Reviriego, J. A. Maestro","doi":"10.1109/RADECS.2008.5782750","DOIUrl":"https://doi.org/10.1109/RADECS.2008.5782750","url":null,"abstract":"When radiating memories, SEUs/MBUs tend to accumulate, making difficult to characterize the number of events and error patterns that have affected the system. A technique to deal with this problem is presented in this paper.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128220451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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