中压功率MOSFET单事件门损伤的三维仿真研究

2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI:10.1109/RADECS.2008.5782713

A. Porzio, F. Velardi, G. Busatto, F. Iannuzzo, A. Sanseverino, G. Currò

{"title":"中压功率MOSFET单事件门损伤的三维仿真研究","authors":"A. Porzio, F. Velardi, G. Busatto, F. Iannuzzo, A. Sanseverino, G. Currò","doi":"10.1109/RADECS.2008.5782713","DOIUrl":null,"url":null,"abstract":"In this paper we present a 3-D simulation study, based on experimental observation, which describes the role played by the strong increase of the electric field in the occurrence of gate damages induced by an heavy ion impact on typical medium power MOSFET devices.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET\",\"authors\":\"A. Porzio, F. Velardi, G. Busatto, F. Iannuzzo, A. Sanseverino, G. Currò\",\"doi\":\"10.1109/RADECS.2008.5782713\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present a 3-D simulation study, based on experimental observation, which describes the role played by the strong increase of the electric field in the occurrence of gate damages induced by an heavy ion impact on typical medium power MOSFET devices.\",\"PeriodicalId\":173369,\"journal\":{\"name\":\"2008 European Conference on Radiation and Its Effects on Components and Systems\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 European Conference on Radiation and Its Effects on Components and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.2008.5782713\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Conference on Radiation and Its Effects on Components and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.2008.5782713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

本文在实验观察的基础上，进行了三维模拟研究，描述了在典型中功率MOSFET器件中，强电场在重离子冲击下栅极损伤的发生中所起的作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET

In this paper we present a 3-D simulation study, based on experimental observation, which describes the role played by the strong increase of the electric field in the occurrence of gate damages induced by an heavy ion impact on typical medium power MOSFET devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2008 European Conference on Radiation and Its Effects on Components and Systems

自引率

0.00%

发文量