Influences of cluster related defects on silicon detector properties

2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI:10.1109/RADECS.2008.5782768

A. Junkes, E. Fretwurst, I. Pintilie

引用次数: 1

Abstract

The influence of proton induced cluster defects on reverse current in n-type silicon diodes combined with annealing studies acquiring the properties of bistable cluster related defects measured by DLTS and TSC.

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簇相关缺陷对硅探测器性能的影响

结合退火研究质子簇缺陷对n型硅二极管中反向电流的影响，获得了双稳态簇缺陷的特性，并通过DLTS和TSC进行了测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 European Conference on Radiation and Its Effects on Components and Systems

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