A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET

2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2008-09-01 DOI:10.1109/RADECS.2008.5782713

A. Porzio, F. Velardi, G. Busatto, F. Iannuzzo, A. Sanseverino, G. Currò

引用次数: 8

Abstract

In this paper we present a 3-D simulation study, based on experimental observation, which describes the role played by the strong increase of the electric field in the occurrence of gate damages induced by an heavy ion impact on typical medium power MOSFET devices.

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中压功率MOSFET单事件门损伤的三维仿真研究

本文在实验观察的基础上，进行了三维模拟研究，描述了在典型中功率MOSFET器件中，强电场在重离子冲击下栅极损伤的发生中所起的作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 European Conference on Radiation and Its Effects on Components and Systems

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