Altitude and underground real-time SER characterization of CMOS 65nm SRAM

2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI:10.1109/radecs.2008.5782774

J. Autran, P. Roche, S. Sauze, G. Gasiot, D. Munteanu, P. Loaiza, M. Zampaolo, J. Borel

引用次数: 17

Abstract

We report real-time SER characterization of CMOS 65nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130nm technology.

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CMOS 65nm SRAM的高空和地下实时SER表征

我们报告了CMOS 65nm SRAM存储器在高原和地下环境中的实时SER表征。中子和α粒子SERs与加速测试获得的数据和CMOS 130nm技术先前测量的值进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 European Conference on Radiation and Its Effects on Components and Systems

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