Multi level RTS in proton irradiated CMOS image sensors manufactured in deep submicron technology

V. Goiffon, G. Hopkinson, P. Magnan, F. Bernard, G. Roland, O. Saint-Pé
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引用次数: 12

Abstract

A new automated method able to detect multi level random telegraph signals in pixel arrays and to extract their main characteristics is presented. The proposed method is applied to several proton irradiated pixel arrays manufactured using a 0.18 μm CMOS process dedicated to imaging. Despite the large proton energy range and the large fluence range used, similar exponential RTS amplitude distributions are observed. A universal mean amplitude is extracted from these distributions and the number of RTS defects appears to scale well with total NIEL. These conclusions allow the prediction of RTS amplitude distributions. The effect of electric field on RTS amplitude is also studied and no significant relation between electric field and RTS amplitude is observed.
用深亚微米技术制造的质子辐照CMOS图像传感器中的多级RTS
提出了一种能够自动检测像素阵列中多电平随机电报信号并提取其主要特征的方法。该方法应用于若干质子辐照像素阵列,这些阵列采用0.18 μm CMOS专用成像工艺制造。尽管使用了大的质子能量范围和大的通量范围,但观察到类似的指数RTS振幅分布。从这些分布中提取了一个通用的平均振幅,RTS缺陷的数量似乎与总NIEL成比例。这些结论可以预测RTS振幅分布。研究了电场对RTS振幅的影响,发现电场与RTS振幅之间没有明显的关系。
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