NAND闪存构建块的TID灵敏度

2008 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI:10.1109/radecs.2008.5782680

M. Bagatin, G. Cellere, S. Gerardin, A. Paccagnella, A. Visconti, S. Beltrami

{"title":"NAND闪存构建块的TID灵敏度","authors":"M. Bagatin, G. Cellere, S. Gerardin, A. Paccagnella, A. Visconti, S. Beltrami","doi":"10.1109/radecs.2008.5782680","DOIUrl":null,"url":null,"abstract":"NAND Flash memories are the leader among high capacity non-volatile memory technologies and are becoming attractive also for radiation harsh environments, such as space. For these applications, a careful assessment of their sensitivity to radiation is needed. In this contribution we analyze TID effects on the many different building blocks of NAND Flash memories, including the charge pumps, row-decoder, and floating gate array. Since each of these elements have dedicated circuital and technological characteristics, we identify and study the peculiar failure mode for each part.","PeriodicalId":173369,"journal":{"name":"2008 European Conference on Radiation and Its Effects on Components and Systems","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"TID sensitivity of NAND Flash memory building blocks\",\"authors\":\"M. Bagatin, G. Cellere, S. Gerardin, A. Paccagnella, A. Visconti, S. Beltrami\",\"doi\":\"10.1109/radecs.2008.5782680\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"NAND Flash memories are the leader among high capacity non-volatile memory technologies and are becoming attractive also for radiation harsh environments, such as space. For these applications, a careful assessment of their sensitivity to radiation is needed. In this contribution we analyze TID effects on the many different building blocks of NAND Flash memories, including the charge pumps, row-decoder, and floating gate array. Since each of these elements have dedicated circuital and technological characteristics, we identify and study the peculiar failure mode for each part.\",\"PeriodicalId\":173369,\"journal\":{\"name\":\"2008 European Conference on Radiation and Its Effects on Components and Systems\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 European Conference on Radiation and Its Effects on Components and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/radecs.2008.5782680\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Conference on Radiation and Its Effects on Components and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs.2008.5782680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 27

摘要

NAND闪存是高容量非易失性存储技术的领导者，对于辐射恶劣的环境(如太空)也越来越有吸引力。对于这些应用，需要仔细评估它们对辐射的敏感性。在这篇文章中，我们分析了TID对NAND闪存的许多不同构建块的影响，包括电荷泵，行解码器和浮动门阵列。由于每个元件都有专用的电路和技术特性，我们识别和研究每个部件的特殊失效模式。

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TID sensitivity of NAND Flash memory building blocks

NAND Flash memories are the leader among high capacity non-volatile memory technologies and are becoming attractive also for radiation harsh environments, such as space. For these applications, a careful assessment of their sensitivity to radiation is needed. In this contribution we analyze TID effects on the many different building blocks of NAND Flash memories, including the charge pumps, row-decoder, and floating gate array. Since each of these elements have dedicated circuital and technological characteristics, we identify and study the peculiar failure mode for each part.

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来源期刊

2008 European Conference on Radiation and Its Effects on Components and Systems

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