2012 4th Asia Symposium on Quality Electronic Design (ASQED)最新文献

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Effects of Mn nanoparticles on wettability and intermetallic compounds in between Sn-3.8Ag-0.7Cu and Cu substrate during multiple reflow 多次回流过程中Mn纳米颗粒对Sn-3.8Ag-0.7Cu与Cu衬底润湿性及金属间化合物的影响
2012 4th Asia Symposium on Quality Electronic Design (ASQED) Pub Date : 2012-07-10 DOI: 10.1109/ACQED.2012.6320519
Koh Kai Xiang, A. Haseeb, M. M. Arafat, G. Yingxin
{"title":"Effects of Mn nanoparticles on wettability and intermetallic compounds in between Sn-3.8Ag-0.7Cu and Cu substrate during multiple reflow","authors":"Koh Kai Xiang, A. Haseeb, M. M. Arafat, G. Yingxin","doi":"10.1109/ACQED.2012.6320519","DOIUrl":"https://doi.org/10.1109/ACQED.2012.6320519","url":null,"abstract":"In this research, the effects of Mn nanoparticles on wettability and interfacial intermetallic compounds in between Sn-3.8Ag-0.7Cu (SAC) solder and copper (Cu) substrate was investigated. The nanocomposite solders were fabricated by mechanical mixing of SAC solder paste with Mn nanoparticles. The melting characteristic of the solders was characterized by differential scanning calorimeter (DSC). The solder pastes were reflowed in a reflow oven at 250°C for 60 seconds. The spreading rate and contact angle of the solders was calculated to measure the wettability. The solder joints were characterized by field emission scanning electron microscope (FESEM) and energy dispersive X-Ray (EDX). It was found that with the addition of Mn nanoparticles the total IMC thickness decreased after first and six times reflow. The Cu3Sn layer was not affected with the addition of Mn nanoparticles. However, some probable mechanism is suggested to explain the effect of Mn nanoparticles on SAC solder.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128244851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A new design methodology of networks on chip 一种新的片上网络设计方法
2012 4th Asia Symposium on Quality Electronic Design (ASQED) Pub Date : 2012-07-10 DOI: 10.1109/ACQED.2012.6320467
A. Mahdoum
{"title":"A new design methodology of networks on chip","authors":"A. Mahdoum","doi":"10.1109/ACQED.2012.6320467","DOIUrl":"https://doi.org/10.1109/ACQED.2012.6320467","url":null,"abstract":"The paper proposes an FPGA-like approach to on-chip communication and comes up with a design methodology where switches are avoided and where two any IPs are connected if and only if they are communicating. It avoids the problem of costly (time, area, energy) intermediate hop counts of on-chip networks (NOCs) between any two source-destination pairs. The second novelty is that without knowing the overlap/disjointness of communication packets between any two IP blocks, a designer may use unnecessary resources (wasting time, space, energy, resources, etc). So, we look into the temporal aspect of communication and then it is possible that some communication phases don't overlap, thus a designer needs not provision resources for such cases. Based on this methodology, our CAD tool aims at designing NOCs subject to bandwidth, area and energy constraints.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124391855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Delay-line based embedded memory access time measurement: Circuit, implementation and characterization techniques 基于延迟线的嵌入式存储器访问时间测量:电路、实现和表征技术
2012 4th Asia Symposium on Quality Electronic Design (ASQED) Pub Date : 2012-07-10 DOI: 10.1109/ACQED.2012.6320512
Moo Kit Lee, Wei Khoon Teng, R. Krishnasamy, W. T. Ng
{"title":"Delay-line based embedded memory access time measurement: Circuit, implementation and characterization techniques","authors":"Moo Kit Lee, Wei Khoon Teng, R. Krishnasamy, W. T. Ng","doi":"10.1109/ACQED.2012.6320512","DOIUrl":"https://doi.org/10.1109/ACQED.2012.6320512","url":null,"abstract":"Embedded memory access time is an important parameter that determines the performance of the memory. To accurately characterize the embedded memory access time across Process, Voltage and Temperature (PVT) variation is always a challenge. In order to get more accurate memory access time data across PVT, the proper implementation of embedded memory access time measurement circuitry and characterization flow is required. This paper presents the circuits, design implementation and characterization methodology for embedded memory access time. We discuss two methods of memory access time measurement circuits, followed by comparing the advantages and disadvantages between them. The result from simulation versus silicon characterization is presented. The first method is Mux-Based Memory Access Time Measurement Circuit (MATC), using simple controller logic to write and read to the memory, plus a Mux and Digital Test Point (DTP) for external measurement. The measurement method is fully off-chip. The second method is Delay-Line Based MATC. It requires more complex circuitry, but the access time measurement is on-chip.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121684427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A low-cost capacitive relative humidity sensor for food moisture monitoring application 一种用于食品湿度监测的低成本电容式相对湿度传感器
2012 4th Asia Symposium on Quality Electronic Design (ASQED) Pub Date : 2012-07-10 DOI: 10.1109/ACQED.2012.6320483
Bo Wang, M. Law, A. Bermak
{"title":"A low-cost capacitive relative humidity sensor for food moisture monitoring application","authors":"Bo Wang, M. Law, A. Bermak","doi":"10.1109/ACQED.2012.6320483","DOIUrl":"https://doi.org/10.1109/ACQED.2012.6320483","url":null,"abstract":"In this paper, a low-cost capacitive relative humidity hygrometer suitable for food moisture monitoring is presented. The variation of dielectric constant of polyimide film to relative humidity enables the sensor's functionality. A fully differential capacitance to digital converter is utilized as the hygrometer digital readout, which is immune to circuit wiring parasitic and enable the sensor's long-term stability. The humidity sensor is implemented using TSMC1P6M 0.18μm technology with thick top metal option. Simulation results indicate that an inaccuracy of +6/-5%RH can be achieved sensing from 10%RH ~ 90%RH, with 5.4μW power consumption for sensing and 21.6mW power consumption for sensor heating.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116254416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Signaling analysis of inter-chip I/O package routing for Multi-Chip Package 多芯片封装中芯片间I/O包路由的信令分析
2012 4th Asia Symposium on Quality Electronic Design (ASQED) Pub Date : 2012-07-10 DOI: 10.1109/ACQED.2012.6320509
K. Yong, W. Song, B. E. Cheah, M. F. Ain
{"title":"Signaling analysis of inter-chip I/O package routing for Multi-Chip Package","authors":"K. Yong, W. Song, B. E. Cheah, M. F. Ain","doi":"10.1109/ACQED.2012.6320509","DOIUrl":"https://doi.org/10.1109/ACQED.2012.6320509","url":null,"abstract":"Multi-Chip Package (MCP) is becoming a customary form of integration in many high performance and advanced electronic devices. The vast adoptions of this technology are mainly contributed by advantages for instance lower power consumption, heterogeneous integration of multiple silicon process technologies and manufacturers, shorter time-to-market and lower costs [1]. However, the high density interchip I/O routing within package presents unique signaling challenges when coupled with high operating data rate. This paper focuses on the signaling analysis of the inter-chip I/O package routing between silicon devices in MCP. In this study, high level signal quality and eye margin sensitivity were evaluated from 2.5GHz up-to 7.5GHz. The microwave effect is found dominating the transmission line component that resulted in signal quality deteriorations. Key limiting factors such as crosstalk coupling effects, signal reflections and frequency dependent losses that caused signal quality degradations were identified and categorized according to the operating frequency and channel length for future MCP design considerations.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116432482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Power awareness for multi-voltage island X-clock tree construction with double-via insertion 带双通孔插入的多电压岛型x时钟树结构的电源感知
2012 4th Asia Symposium on Quality Electronic Design (ASQED) Pub Date : 2012-07-10 DOI: 10.1109/ACQED.2012.6320495
Chia-Chun Tsai, Trong-Yen Lee
{"title":"Power awareness for multi-voltage island X-clock tree construction with double-via insertion","authors":"Chia-Chun Tsai, Trong-Yen Lee","doi":"10.1109/ACQED.2012.6320495","DOIUrl":"https://doi.org/10.1109/ACQED.2012.6320495","url":null,"abstract":"This paper proposes an algorithm to construct an X-clock tree with double via insertion that connects several voltage islands for power minimization. We first construct the X-clock tree for each voltage island and make double via insertion for this tree to improve yield and reliability. Then we combine these X-clock trees based on a well-defined connection with inserted level shifters to reduce power. The delay effect due to total number of vias is also accounted. Experimental results show that X-clock tree based on multi-voltage islands has 22.46% and 5.41% respectively in power and delay less than that of single voltage island.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121923224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Structural package and board design approach for System-on-Chip power delivery analysis 片上系统功耗分析的结构封装和电路板设计方法
2012 4th Asia Symposium on Quality Electronic Design (ASQED) Pub Date : 2012-07-10 DOI: 10.1109/ACQED.2012.6320508
Wai Ling Lee, Li Chuang Quek
{"title":"Structural package and board design approach for System-on-Chip power delivery analysis","authors":"Wai Ling Lee, Li Chuang Quek","doi":"10.1109/ACQED.2012.6320508","DOIUrl":"https://doi.org/10.1109/ACQED.2012.6320508","url":null,"abstract":"With the increasing complexity of circuit design, CPU and chipset electrical design target has changed and continue to be more stringent. Power delivery design is getting more challenging to ensure no device functional failure in low power and low cost product. Therefore, platform power delivery engineer is playing an essential role in implementing robust electrical solution. Despite of all these, there is a hidden challenge as System-on-Chip power delivery engineer does not have platform design detail for instance package stack-up and number of layer as well as platform size to initiate power delivery design. This urges the team to transform from traditional passive power delivery working model to more proactive role. This paper presents structural approach of platform parasitic estimation at early product definition phase and production design cycle phase. Accurate estimation of platform parasitic is important to enable early product power delivery involvement and BGA (Ball Grid Array) reduction that could facilitate product cost saving. The correlation of the estimated result and the simulated result is presented and further discussed in the study.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116595675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Clock tree construction using gated clock cloning 利用门控时钟克隆构建时钟树
2012 4th Asia Symposium on Quality Electronic Design (ASQED) Pub Date : 2012-07-10 DOI: 10.1109/ACQED.2012.6320475
Wun-Han Chen, Hsin-Hung Chang, Jui-Hung Hung, T. Hsieh
{"title":"Clock tree construction using gated clock cloning","authors":"Wun-Han Chen, Hsin-Hung Chang, Jui-Hung Hung, T. Hsieh","doi":"10.1109/ACQED.2012.6320475","DOIUrl":"https://doi.org/10.1109/ACQED.2012.6320475","url":null,"abstract":"Clock gating is one of the important techniques to achieve low power and small area in high-performance synchronous circuit design. In this paper, we propose a three-phase clock gating optimization methodology by using clustering and merging algorithm to construct a gated clock tree with minimal number of clock gating cells and buffers. In addition, according to the fan-out numbers of a clock gating cell, we derive a parameter γ that may be used to adjust the tradeoff between clock gating cell and buffer. The experimental results show that the number of clock gating cells and buffers reduced in each phase in our algorithm. Our solutions are better than greedy approach.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125211875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Low-power and robust SRAM cells based on asymmetric FinFET structures 基于非对称FinFET结构的低功耗和鲁棒SRAM单元
2012 4th Asia Symposium on Quality Electronic Design (ASQED) Pub Date : 2012-07-10 DOI: 10.1109/ACQED.2012.6320473
B. Ebrahimi, R. Asadpour, A. Afzali-Kusha
{"title":"Low-power and robust SRAM cells based on asymmetric FinFET structures","authors":"B. Ebrahimi, R. Asadpour, A. Afzali-Kusha","doi":"10.1109/ACQED.2012.6320473","DOIUrl":"https://doi.org/10.1109/ACQED.2012.6320473","url":null,"abstract":"In this paper, we investigate the characteristics of low-power and robust SRAM cells based on asymmetric FinFET structures in a 32 nm technology. They are based on asymmetric source and drain structures and include Asymmetric Drain Spacer Extension (ADSE) and Asymmetric Doped Drain (ADD) FinFETs. The study includes two recently introduced 6-T SRAM cells based on these structures. In addition, we propose four transistor driverless (4-TDL) and loadless (4-TLL) SRAM cells based on these asymmetric structures. In the investigation, which compares the structures, the effect of different channel orientations is also considered. The results indicate that for 6-T, 4-TDL, and 4-TLL with different channel orientations asymmetric structures have higher read stabilities than the symmetric ones. In addition, the channel orientation (100) presents a higher read stability for 4-TLL while the channel orientation (110) gives rise to a better read stability for 6-T and 4-TDL. Asymmetric structures, however, have lower read currents where the ADSE structure leads to the least one. In terms of write operation, the asymmetric structures present better stability where 4-T cells outperform the 6-T cell. Finally, the results on static power shows that the ADD FinFET structure provides the lowest static power values due to a better DIBL control.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133924577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Decoupling capacitor placer algorithm with routing and area consideration in VLSI layout design VLSI版图设计中考虑布线和面积的去耦电容放料算法
2012 4th Asia Symposium on Quality Electronic Design (ASQED) Pub Date : 2012-07-10 DOI: 10.1109/ACQED.2012.6320489
Thomas Goh Fong Chee, Jonathan Ong Yoong Seang, Chun Keong Lee
{"title":"Decoupling capacitor placer algorithm with routing and area consideration in VLSI layout design","authors":"Thomas Goh Fong Chee, Jonathan Ong Yoong Seang, Chun Keong Lee","doi":"10.1109/ACQED.2012.6320489","DOIUrl":"https://doi.org/10.1109/ACQED.2012.6320489","url":null,"abstract":"Conventional manual placement for decoupling capacitance (decap) is very time consuming and may lead to unavoidable human errors. In VLSI design environments there is a critical need to have an automated way via CAD tools, particularly to ensure quick turn-around times in the face of strong time-to-market pressures. Unfortunately, existing placer algorithms work best on rectangle placement regions, but are less efficient when working on polygon placement regions with more than 4 vertices. Therefore, in this paper, we present and propose a decap placer using new placement algorithm named Size and Level oriented algorithm (SL). This decap placer is implemented with routing and area consideration which works efficiently on not only rectangle but polygon placement regions as well. Furthermore, different placement orientations are implemented also in this decap placer for better decaps placement coverage.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125421931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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