2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)最新文献_第4页

Cell library techniques using advanced transistor structures 使用先进晶体管结构的细胞库技术

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI: 10.1109/ICICDT.2004.1309945

R. Aitken, S. Becker

引用次数: 3

Atomic scale defects in the Si/SiON system and the negative bias temperature instability Si/SiON体系中的原子尺度缺陷与负偏置温度不稳定性

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI: 10.1109/ICICDT.2004.1309970

P. Lenahan

引用次数: 0

Effect of channel width, length, and latent damage on NBTI 通道宽度、长度和潜在损伤对NBTI的影响

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI: 10.1109/ICICDT.2004.1309971

G. Cellere, M. G. Valentini, Alessandro Paccagnella

引用次数: 21

Monitoring and preventing arc-induced wafer damage in 300mm manufacturing 在300mm制造过程中监测和防止电弧引起的晶圆损坏

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI: 10.1109/ICICDT.2004.1309927

J. Parker, M. Reath, A. Krauss, W. J. Campbell

引用次数: 5

A study of SiN cap NH/sub 3/ plasma pre-treatment process on the PID, EM, GOI performance and BEOL defectivity in Cu dual damascene technology sincap NH/sub - 3/等离子体预处理工艺对Cu双氧化工艺中PID、EM、GOI性能和BEOL缺陷的影响研究

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI: 10.1109/ICICDT.2004.1309924

C. Ang, W. Lu, A. Yap, L. C. Goh, L. Goh, Y. K. Lim, C. Chua, L. Ko, T. Tan, S. Toh, L. Hsia

引用次数: 1

Impact of process variation phenomena on performance and quality assessment 过程变异现象对绩效和质量评价的影响

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI: 10.1109/ICICDT.2004.1309897

G. Sery

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引用次数: 1

Minimizing power under performance constraint 在性能约束下最小化功耗

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI: 10.1109/ICICDT.2004.1309935

R. Puri

引用次数: 5

Physics-based device models for nanoscale double-gate MOSFETs 纳米级双栅mosfet的物理器件模型

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI: 10.1109/ICICDT.2004.1309911

Qiang Chen, Lihui Wang, J. Meindl

引用次数: 6

Build-in reliability analysis for circuit design in the nanometer technology era 纳米技术时代电路设计的内置可靠性分析

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI: 10.1109/ICICDT.2004.1309946

Zhihong Liu, Weiquan Zhang, Fuchen Mu

引用次数: 4

Integration challenges of new materials and device architectures for IC applications 集成电路应用中新材料和器件架构的集成挑战

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI: 10.1109/ICICDT.2004.1309953

B. Nguyen, A. Thean, T. White, A. Vandooren, M. Sadaka, L. Mathew, A. Barr, S. Thomas, M. Zalava, Da Zhang, D. Eades, Zhonghai Shi, J. Schaeffer, D. Triyoso, S. Samavedam, V. Vartanian, T. Stephen, B. Goolsby, S. Zollner, Ran Liu, R. Noble, T. Nguyen, V. Dhandapani, B. Xie, X. Wang, J. Jiang, R. Rai, M. Sadd, M. Ramón, S. Kalpat, L. Prabhu, V. Kaushik, Y. Du, T. Dao, M. Mendicino, Marius K. Orlowski, P. Tobin, J. Mogab, S. Venkatesan

引用次数: 2