Atomic scale defects in the Si/SiON system and the negative bias temperature instability

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309970

P. Lenahan

引用次数: 0

Abstract

This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO/sub 2/-SiON systems which are likely involved in the negative bias temperature instability.

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Si/SiON体系中的原子尺度缺陷与负偏置温度不稳定性

本文综述了目前对Si/SiO/sub - 2/-SiON体系中可能与负偏压温度不稳定性有关的几个原子尺度缺陷和缺陷/氢相互作用的认识。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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