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30th Annual Proceedings Reliability Physics 1992最新文献

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The bond shear test: an application for the reduction of common causes of gold ball bond process variation 粘结剪切试验:用于减少导致金球粘结过程变化的常见原因的一种应用
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187654
M. Shell-De Guzman, M. Mahaney
{"title":"The bond shear test: an application for the reduction of common causes of gold ball bond process variation","authors":"M. Shell-De Guzman, M. Mahaney","doi":"10.1109/RELPHY.1992.187654","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187654","url":null,"abstract":"Examples indicate that the bond shear test can be used effectively to reduce common cause variability in the wire bond process, allowing in-process monitors to detect unusual events in the process more efficiently. The first example illustrates that before a process can be improved, its measurement system must have less variability than the process it measures. The second example, an investigation of capillary change effects, illustrates that the sensitivity of bond shear can be used to identify bonder components that contribute significantly to process variability. The third example suggests that shear results can be used as a standard whereby a given bonder's power and force parameters can be set to produce consistent bond strengths over time, and many bonders can be set to produce bonds of similar strengths.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134518098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Development of design rules for reliable tungsten plugs using simulations 基于仿真的可靠钨塞设计规则的制定
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187614
M. Islamraja, A. Bariya, K. Saraswat, M. Cappelli, J. Mcvittie, L. Moberly, R. Lahri
{"title":"Development of design rules for reliable tungsten plugs using simulations","authors":"M. Islamraja, A. Bariya, K. Saraswat, M. Cappelli, J. Mcvittie, L. Moberly, R. Lahri","doi":"10.1109/RELPHY.1992.187614","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187614","url":null,"abstract":"Design rules for the fabrication of reliable tungsten via plugs, produced using blanket tungsten deposition and etch-back, have been developed using experimental results and computer simulations. Fast computer simulations have been used to define the design rules for this process. The use of computer simulations greatly reduces the number of experiments required to develop a process or to establish design rules. The design rules ensure that the via plugs are void free and that they do not form a severe topography during the etch-back.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122110357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Post-stress interface trap generation: a new hot-carrier induced degradation phenomenon in passivated n-channel MOSFET's 应力后界面陷阱的产生:钝化n沟道MOSFET中一种新的热载子诱导退化现象
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187633
E. De Schrijver, P. Heremans, R. Bellens, G. Groeseneken, H. Maes
{"title":"Post-stress interface trap generation: a new hot-carrier induced degradation phenomenon in passivated n-channel MOSFET's","authors":"E. De Schrijver, P. Heremans, R. Bellens, G. Groeseneken, H. Maes","doi":"10.1109/RELPHY.1992.187633","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187633","url":null,"abstract":"Passivated n-channel MOSFETs can show significant increases in interface trap density after termination of hot carrier stress. The dependence of this poststress interface trap generation mechanism on various parameters was investigated. A simple model based on the generation of both positive and neutral hydrogen by detrapped holes injected during stress can account for all observed phenomena. For accelerated lifetime experiments under AC conditions for which hole injection occurs, an apparently non-quasistatic behavior was observed that can be readily explained by this mechanism. Prediction of device lifetime under AC conditions, based solely on DC experiments, is then straightforward.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122836303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Selective removal of dielectrics from integrated circuits for electron beam probing 电子束探测用集成电路中介电体的选择性去除
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187664
W. Baerg, V. Rao, R. Livengood
{"title":"Selective removal of dielectrics from integrated circuits for electron beam probing","authors":"W. Baerg, V. Rao, R. Livengood","doi":"10.1109/RELPHY.1992.187664","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187664","url":null,"abstract":"An apparatus and method for selectively removing dielectric layers from integrated circuits, to expose up to three layers of metal interconnect for electron beam probing, are described. The results are achieved by using a CF/sub 4//O/sub 2/ plasma reactive ion etch process. Fixtures and process conditions were combined to prevent transistor damage, metal sputtering onto sample from various sources, polymer deposition, undercutting and overetching.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125017965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Analysis of silicide process defects by non-contact electron-beam charging 非接触电子束充电硅化工艺缺陷分析
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187661
K. A. Jenkins, P. Agnello, T.J. Bucelot
{"title":"Analysis of silicide process defects by non-contact electron-beam charging","authors":"K. A. Jenkins, P. Agnello, T.J. Bucelot","doi":"10.1109/RELPHY.1992.187661","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187661","url":null,"abstract":"Electron beam charging without any conventional electrical measurements has been used to understand gate electrode leakage currents in a silicide process. Using this technique, it was determined that the leakage is caused by single defects which are small compared to the typical circuit dimensions, which occur on the gate perimeter, and are randomly distributed. Combined with one additional process step, it was determined that the leakage is not due to silicide bridging, but rather to a gate oxide overetch. The measurement has been instituted as an inline process monitor to screen for silicide leakage defects.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121316404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Evaluation of hot carrier effects in TFT by emission microscopy 用发射显微镜评价TFT中的热载子效应
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187624
J. Komori, S. Maeda, K. Sugahara, J. Mitsuhashi
{"title":"Evaluation of hot carrier effects in TFT by emission microscopy","authors":"J. Komori, S. Maeda, K. Sugahara, J. Mitsuhashi","doi":"10.1109/RELPHY.1992.187624","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187624","url":null,"abstract":"Hot carrier degradation of p-channel polycrystalline silicon thin film transistors was investigated by emission microscopy. An automatic measurement system was developed for the evaluation of hot carrier degradation. In the system, the measurement of electrical characteristics and the monitoring of photoemission are done simultaneously. This system was used to identify the dominant mechanism of hot carrier degradation in thin-film transistors and to evaluate the effect of plasma hydrogenation on hot carrier degradation.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114062705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low frequency 1/f noise and current gain degradation in BiCMOS n-p-n transistors BiCMOS n-p-n晶体管的低频1/f噪声和电流增益退化
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187630
M. Dreyer, J. Durec
{"title":"Low frequency 1/f noise and current gain degradation in BiCMOS n-p-n transistors","authors":"M. Dreyer, J. Durec","doi":"10.1109/RELPHY.1992.187630","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187630","url":null,"abstract":"The authors report experimental results on the effect of forward current gain (h/sub fe/ degradation on the low-frequency 1/f noise characteristics of polysilicon emitter n-p-n transistors. A direct relationship between progressively increasing levels of h/sub fe/ degradation and changes in the 1/f noise spectra has been observed. Measurement of the base Gummel characteristic and base current dependence of the noise suggests that surface recombination resulting from hot carrier stress degrades h/sub fe/ and is the dominant 1/f noise source.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127748738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Rapid localization of IC open conductors using charge-induced voltage alteration (CIVA) 基于电荷感应电压变化的IC开路导体快速定位
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187659
E. I. Cole, R. Anderson
{"title":"Rapid localization of IC open conductors using charge-induced voltage alteration (CIVA)","authors":"E. I. Cole, R. Anderson","doi":"10.1109/RELPHY.1992.187659","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187659","url":null,"abstract":"Charge-induced voltage alteration (CIVA) is a new scanning electron microscopy technique developed to localize open conductors, on both passivated and depassivated ICs. CIVA overcomes the limitations usually encountered in localizing open conductors. CIVA images are produced by monitoring the voltage fluctuations of a constant current power, supply as an electron beam is scanned over the IC surface. Contrast variations in the CIVA images are generated only from the electrically open portion of a conductor. Because of this high selectivity, CIVA facilitates localization of open interconnections on an entire IC in a single, unprocessed image. The equipment needed to implement CIVA and examples of applying the technique to several failed CMOS ICs are described. Possible irradiation effects and methods to minimize them are also discussed.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116706256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Simulations of CMOS circuit degradation due to hot-carrier effects 热载子效应导致CMOS电路退化的仿真
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187616
K. Quader, P. Ko, C. Hu, P. Fang, J. Yue
{"title":"Simulations of CMOS circuit degradation due to hot-carrier effects","authors":"K. Quader, P. Ko, C. Hu, P. Fang, J. Yue","doi":"10.1109/RELPHY.1992.187616","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187616","url":null,"abstract":"By comparing long-term ring-oscillator hot-carrier degradation data and simulation results the authors show that a public-domain circuit simulator, BERT (Berkeley Reliability Tools), can predict CMOS digital circuit speed degradation from transistor DC stress data. Large initial PMOSFET drain current enhancement can result in initial frequency enhancement followed by an initial fast degradation due to the zero crossing effect. The relationship between circuit lifetime and transistor DC stress is examined.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129479230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
Building-in reliability: soft errors-a case study 内建可靠性:软错误——一个案例研究
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187657
Z. Hasnain, A. Ditali
{"title":"Building-in reliability: soft errors-a case study","authors":"Z. Hasnain, A. Ditali","doi":"10.1109/RELPHY.1992.187657","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187657","url":null,"abstract":"A case is described for implementing building-in reliability. The case study deals with the phenomenon of soft-error rates in DRAMs. It is shown that the process begins with looking at output variables and then working backwards to identify the key input variables that affect the output variables. The authors demonstrate how monitoring the identified input variables leads to a stable process in manufacturing. In addition, they have identified a new source of alpha particles that contributes to the soft error rate of memory ICs, namely, the phosphoric acid used during wafer fabrication. The findings show that the raw materials used in wafer fabrication are at least as great a source of alpha particle emissivity as are packaging materials.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116688346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
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