{"title":"BiCMOS n-p-n晶体管的低频1/f噪声和电流增益退化","authors":"M. Dreyer, J. Durec","doi":"10.1109/RELPHY.1992.187630","DOIUrl":null,"url":null,"abstract":"The authors report experimental results on the effect of forward current gain (h/sub fe/ degradation on the low-frequency 1/f noise characteristics of polysilicon emitter n-p-n transistors. A direct relationship between progressively increasing levels of h/sub fe/ degradation and changes in the 1/f noise spectra has been observed. Measurement of the base Gummel characteristic and base current dependence of the noise suggests that surface recombination resulting from hot carrier stress degrades h/sub fe/ and is the dominant 1/f noise source.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Low frequency 1/f noise and current gain degradation in BiCMOS n-p-n transistors\",\"authors\":\"M. Dreyer, J. Durec\",\"doi\":\"10.1109/RELPHY.1992.187630\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors report experimental results on the effect of forward current gain (h/sub fe/ degradation on the low-frequency 1/f noise characteristics of polysilicon emitter n-p-n transistors. A direct relationship between progressively increasing levels of h/sub fe/ degradation and changes in the 1/f noise spectra has been observed. Measurement of the base Gummel characteristic and base current dependence of the noise suggests that surface recombination resulting from hot carrier stress degrades h/sub fe/ and is the dominant 1/f noise source.<<ETX>>\",\"PeriodicalId\":154383,\"journal\":{\"name\":\"30th Annual Proceedings Reliability Physics 1992\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th Annual Proceedings Reliability Physics 1992\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1992.187630\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th Annual Proceedings Reliability Physics 1992","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1992.187630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low frequency 1/f noise and current gain degradation in BiCMOS n-p-n transistors
The authors report experimental results on the effect of forward current gain (h/sub fe/ degradation on the low-frequency 1/f noise characteristics of polysilicon emitter n-p-n transistors. A direct relationship between progressively increasing levels of h/sub fe/ degradation and changes in the 1/f noise spectra has been observed. Measurement of the base Gummel characteristic and base current dependence of the noise suggests that surface recombination resulting from hot carrier stress degrades h/sub fe/ and is the dominant 1/f noise source.<>