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30th Annual Proceedings Reliability Physics 1992最新文献

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The impact of delamination on stress-induced and contamination-related failure in surface mount ICs 表面贴装集成电路中脱层对应力诱导和污染相关失效的影响
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187642
Thomas M. Moore, S. J. Kelsall
{"title":"The impact of delamination on stress-induced and contamination-related failure in surface mount ICs","authors":"Thomas M. Moore, S. J. Kelsall","doi":"10.1109/RELPHY.1992.187642","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187642","url":null,"abstract":"A temperature-cycle evaluation is reported of a large-die 132-pin plastic quad flat pack process which includes a comparison of the performances of three mold compounds, two lead frame finishes, and two die surface conditions with and without a polyimide die overcoat. The effect of contamination and moisture exposure on bond pad integrity in 68-pin leaded chip carriers damaged during solder reflow was also examined.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125450874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
Long-term effects of sidegating on GaAs MESFETs 侧化对GaAs mesfet的长期影响
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187621
H. Cholan, Douglas Stunkard, T. Rubalcava
{"title":"Long-term effects of sidegating on GaAs MESFETs","authors":"H. Cholan, Douglas Stunkard, T. Rubalcava","doi":"10.1109/RELPHY.1992.187621","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187621","url":null,"abstract":"The main purpose of this study was to monitor the effects of sidegating over time. Both enhancement mode and depletion mode MESFETs, with and without isolation implants, were tested at elevated temperatures. The sidegate effect is caused when carriers are introduced into the substrate with a negative potential contact. All electrodes were manufactured with ohmic contacts. Once in the substrate, the electrons move towards more positive potentials. As they move through the GaAs substrate, some electrons are trapped. If trapped near the FET, the electrons can influence the threshold or pinchoff voltage of the device. In this study, the influence was measured by monitoring the channel current in MESFETs. A FET was considered sidegated, when the channel current was reduced by 10%. This study was performed also to investigate whether the wearout failure mechanisms make MESFETs more susceptible to sidegating effects as they age.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129241471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Electromigration lifetime as a function of line length or step number 电迁移寿命作为线路长度或步长的函数
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187671
T. Nogami, S. Oka, K. Naganuma, T. Nakata, C. Maeda, O. Haida
{"title":"Electromigration lifetime as a function of line length or step number","authors":"T. Nogami, S. Oka, K. Naganuma, T. Nakata, C. Maeda, O. Haida","doi":"10.1109/RELPHY.1992.187671","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187671","url":null,"abstract":"The dependence of electromigration-induced (EM) failure time on line length and step number in the line has been investigated. Theoretical equations for the dependence are derived assuming that EM failure obeys the Weibull failure distribution function. The EM failure time distribution of 2.4 mu m-wide AlSi(1%) lines of different lengths or with different step numbers agreed well with the equations. Also confirmed experimentally was the theoretical prediction that the shape parameter m in the Weibull distribution function is the key parameter for estimating the EM lifetime of an LSI product based on lifetime measurements of test structures. A lower EM resistance at the step location than that of the flat lines has been investigated quantitatively and has been interpreted in terms of the difference in step coverage, joule heating, grain size, and stress. A unifying equation to include both straight and step locations for EM lifetime is derived.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127867835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Three kinds of via electromigration failure mode in multilevel interconnections 多级互连中三种通孔电迁移失效模式
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187668
T. Yamaha, M. Naitou, T. Hotta
{"title":"Three kinds of via electromigration failure mode in multilevel interconnections","authors":"T. Yamaha, M. Naitou, T. Hotta","doi":"10.1109/RELPHY.1992.187668","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187668","url":null,"abstract":"The via electromigration performance of four metallization systems has been investigated for via chains of 1500-4400 vias of 1.0 mu m diameter. AL(AL/Ti), (Al/Ti)AL, and AL/(WSi/AL) metallization systems have longer electromigration lifetime than AL/AL. The via failures have been analyzed by the contrast scanning ion microscope technique. Further failure analysis by focused ion beam milling on the opened via has revealed that at least three kinds of failure modes exist for via electromigration. Models for the failure mechanism in each metallization system are discussed.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122463004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Corrosion susceptibility of thin-film metallizations 金属化薄膜的腐蚀敏感性
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187652
A. J. Griffin, F. Brotzen, J. McPherson, C. Dunn
{"title":"Corrosion susceptibility of thin-film metallizations","authors":"A. J. Griffin, F. Brotzen, J. McPherson, C. Dunn","doi":"10.1109/RELPHY.1992.187652","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187652","url":null,"abstract":"Anodic DC polarization and AC electrochemical impedance-spectroscopy techniques were applied to obtain a better understanding of the corrosion process in Al and Al-Cu thin-film metallizations. The oxide-layer resistance, oxide-layer/double-layer capacitance, and anodic-polarization scans of Al and Al-Co thin-film metallizations which have been sputtered onto partially oxidized silicon substrates are correlated to oxide-layer thickness, Cu distribution, and oxide-layer integrity. Auger electron spectroscopy was employed to quantify oxide-layer thickness and its apparent influence on impedance-spectroscopy response, while scanning electron microscopy was used to observe the type of corrosion attack. The results discussed are compared with results previously obtained on bulk Al-Co alloys.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132491647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of experiments: a tool for continuous process improvement 实验设计:持续过程改进的工具
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187612
J. Sredni
{"title":"Design of experiments: a tool for continuous process improvement","authors":"J. Sredni","doi":"10.1109/RELPHY.1992.187612","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187612","url":null,"abstract":"The author outlines an optimal approach needed to implement the process of continuous process improvement through the use of proper statistical methods. Industrial systems are usually affected by high noise and very weak signals. Active data collection systems lead to statistical design of experiments that are invaluable in all stages of process improvement, both for reduction of variability and for improvement in output variables, such as yield and reliability. The most critical issue is to decide where to perform experiments to obtain the maximum knowledge with the fewest tests. Continuous improvement processes are emphasized in order to achieve a reduction in noise and an improvement in the signal. A stepwise process which has been used successfully in industries to achieve this goal is described.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132602810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reliability study of a GaAs MMIC amplifier 一种GaAs MMIC放大器的可靠性研究
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187665
K. Christianson, J. Roussos, W. Anderson
{"title":"Reliability study of a GaAs MMIC amplifier","authors":"K. Christianson, J. Roussos, W. Anderson","doi":"10.1109/RELPHY.1992.187665","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187665","url":null,"abstract":"Accelerated aging was used to investigated the reliability of a 2-18 GHz monolithic microwave integrated circuit amplifier. A mean time between failures of 2.5*10/sup 5/ h at a channel temperature of 125 degrees C was estimated from high-temperature accelerated RF lifetest results. Failure analysis revealed that degradation and burnout were caused by leakage currents at the GaAs surface/passivation-layer interface.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114311474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Relaxation phenomenon during electromigration under pulsed current 脉冲电流下电迁移中的松弛现象
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187647
K. Hinode, T. Furusawa, Y. Homma
{"title":"Relaxation phenomenon during electromigration under pulsed current","authors":"K. Hinode, T. Furusawa, Y. Homma","doi":"10.1109/RELPHY.1992.187647","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187647","url":null,"abstract":"Relaxation in electromigration is one of the most important factors which determine the lifetime of a conductor carrying a pulsed current. The purpose was to clarify the mechanism of this relaxation. During low-frequency (DC to mHz) pulse-migration tests, an extremely slow relaxation was detected in Al conductor resistances after pulse-on and pulse-off. Conductor lifetime dependence on the pulse frequency revealed that this relaxation phenomenon corresponds to the recovery of migration damage. The very slow rate of the relaxation suggests that the resistance changes are caused by processes such as long-distance grain boundary diffusion.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123885169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
An in-process monitor for n-channel MOSFET hot carrier lifetimes n沟道MOSFET热载流子寿命的进程内监视器
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187634
K. Mistry, D. Krakauer, B. Doyle, T.A. Spooner, D. B. Jackson
{"title":"An in-process monitor for n-channel MOSFET hot carrier lifetimes","authors":"K. Mistry, D. Krakauer, B. Doyle, T.A. Spooner, D. B. Jackson","doi":"10.1109/RELPHY.1992.187634","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187634","url":null,"abstract":"A rapid test that can detect changes in the hot carrier reliability of n-channel MOSFETs due to process induced damage to the oxide/interface was developed. The test consists of a short snapback stress phase, followed by a 5-s electron injection phase. Results are shown to be strongly correlated with variations in hot carrier reliability due to oxide damage during upper-level processing steps. The test assumes that basic MOSFET structural parameters such as doping profiles and channel lengths do not vary significantly. This type of test is particularly useful as an inline monitor in wafer fabrication, enabling the rapid detection of process induced damage effects on hot carrier lifetime. The use of 1/f noise signals as a monitor for hot carrier resistance was also investigated. It was shown that the 1/f noise signal of an unstressed MOSFET was not correlated with its hot carrier robustness.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122140423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A new mechanism for degradation of Al-Si-Cu/TiN/Ti contacted p-n junction Al-Si-Cu/TiN/Ti接触p-n结降解的新机制
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187678
T. Yoshida, H. Kawahara, S. Ogawa
{"title":"A new mechanism for degradation of Al-Si-Cu/TiN/Ti contacted p-n junction","authors":"T. Yoshida, H. Kawahara, S. Ogawa","doi":"10.1109/RELPHY.1992.187678","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187678","url":null,"abstract":"A new degradation mechanism that involves time dependent p-n junction characteristics is described. It has been found that reverse bias leakage current of the p-n junctions increases during reverse bias and temperature aging stress. It it clarified that this p-n junction degradation is dependent on crystallinity of the Ti-Si interdiffused layer at the contact interface in the Al-Si-Cu/TiN/Ti/Si substrate structure. In the case of an amorphous Ti-Si layer, the degradation is caused by diffusion of positively ionized Ti enhanced by the applied electric field.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"206 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115167625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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