电子束探测用集成电路中介电体的选择性去除

30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI:10.1109/RELPHY.1992.187664

W. Baerg, V. Rao, R. Livengood

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引用次数: 6

摘要

描述了一种用于从集成电路中选择性地去除介电层以暴露至多三层金属互连以进行电子束探测的装置和方法。结果是通过使用CF/sub - 4//O/sub - 2/等离子体反应离子蚀刻工艺获得的。夹具和工艺条件相结合，以防止晶体管损坏，金属溅射到各种来源的样品上，聚合物沉积，下切和过刻。

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Selective removal of dielectrics from integrated circuits for electron beam probing

An apparatus and method for selectively removing dielectric layers from integrated circuits, to expose up to three layers of metal interconnect for electron beam probing, are described. The results are achieved by using a CF/sub 4//O/sub 2/ plasma reactive ion etch process. Fixtures and process conditions were combined to prevent transistor damage, metal sputtering onto sample from various sources, polymer deposition, undercutting and overetching.<>

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30th Annual Proceedings Reliability Physics 1992

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