M. Islamraja, A. Bariya, K. Saraswat, M. Cappelli, J. Mcvittie, L. Moberly, R. Lahri
{"title":"Development of design rules for reliable tungsten plugs using simulations","authors":"M. Islamraja, A. Bariya, K. Saraswat, M. Cappelli, J. Mcvittie, L. Moberly, R. Lahri","doi":"10.1109/RELPHY.1992.187614","DOIUrl":null,"url":null,"abstract":"Design rules for the fabrication of reliable tungsten via plugs, produced using blanket tungsten deposition and etch-back, have been developed using experimental results and computer simulations. Fast computer simulations have been used to define the design rules for this process. The use of computer simulations greatly reduces the number of experiments required to develop a process or to establish design rules. The design rules ensure that the via plugs are void free and that they do not form a severe topography during the etch-back.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th Annual Proceedings Reliability Physics 1992","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1992.187614","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Design rules for the fabrication of reliable tungsten via plugs, produced using blanket tungsten deposition and etch-back, have been developed using experimental results and computer simulations. Fast computer simulations have been used to define the design rules for this process. The use of computer simulations greatly reduces the number of experiments required to develop a process or to establish design rules. The design rules ensure that the via plugs are void free and that they do not form a severe topography during the etch-back.<>