{"title":"Evaluation of hot carrier effects in TFT by emission microscopy","authors":"J. Komori, S. Maeda, K. Sugahara, J. Mitsuhashi","doi":"10.1109/RELPHY.1992.187624","DOIUrl":null,"url":null,"abstract":"Hot carrier degradation of p-channel polycrystalline silicon thin film transistors was investigated by emission microscopy. An automatic measurement system was developed for the evaluation of hot carrier degradation. In the system, the measurement of electrical characteristics and the monitoring of photoemission are done simultaneously. This system was used to identify the dominant mechanism of hot carrier degradation in thin-film transistors and to evaluate the effect of plasma hydrogenation on hot carrier degradation.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th Annual Proceedings Reliability Physics 1992","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1992.187624","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Hot carrier degradation of p-channel polycrystalline silicon thin film transistors was investigated by emission microscopy. An automatic measurement system was developed for the evaluation of hot carrier degradation. In the system, the measurement of electrical characteristics and the monitoring of photoemission are done simultaneously. This system was used to identify the dominant mechanism of hot carrier degradation in thin-film transistors and to evaluate the effect of plasma hydrogenation on hot carrier degradation.<>