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30th Annual Proceedings Reliability Physics 1992最新文献

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Thin oxide damage by plasma etching and ashing processes 等离子体蚀刻和灰化工艺造成的薄氧化物损伤
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187618
H. Shin, C. King, C. Hu
{"title":"Thin oxide damage by plasma etching and ashing processes","authors":"H. Shin, C. King, C. Hu","doi":"10.1109/RELPHY.1992.187618","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187618","url":null,"abstract":"In the study reported, the plasma Al etching and resist ashing processes caused Fowler-Nordheim current to flow through the oxide. The stress current was collected only through the aluminum surfaces not covered by the photoresist during the plasma processes. The plasma stress current was proportional to the Al pad peripheral length during Al etching and the Al pad area during photoresist stripping. Using the measured stress current, the breakdown voltage distribution of oxides after plasma processes can be predicted accurately. A model of oxide damage due to plasma etching is proposed.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125856917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 71
Comparison of electromigration reliability of tungsten and aluminum vias under DC and time-varying current stressing 直流和时变电流应力下钨铝过孔的电迁移可靠性比较
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187667
J. Tao, K. K. Young, N. Cheung, C. Hu
{"title":"Comparison of electromigration reliability of tungsten and aluminum vias under DC and time-varying current stressing","authors":"J. Tao, K. K. Young, N. Cheung, C. Hu","doi":"10.1109/RELPHY.1992.187667","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187667","url":null,"abstract":"Using Kelvin test structures, the via reliability with respect to electromigration failure of tungsten and aluminum vias under DC, pulse-DC and AC stressing have ben studied. The results indicate that although W-plug vias can eliminate the step coverage problem, this metallization system is not ideal because the Al/W contact presents an undesirable flux divergence location for electromigration. Al vias are more reliable than W-plug vias with respect to electromigration failure. The via lifetimes under bidirectional stressing current were found to be orders of magnitude longer than DC lifetimes under the same stressing current density for both W and al vias. The unidirectional 50% duty-factor pulse-DC lifetime was found to be twice the DC lifetime at the low-frequency region (<200 Hz) and 4-5 times the DC lifetime at the high-frequency region (>10 kHz), in agreement with the vacancy relaxation model.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129420362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Reactive ion etching for failure analysis applications 失效分析应用的反应离子蚀刻
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187663
M. Abramo, E. Roy, S. LeCours
{"title":"Reactive ion etching for failure analysis applications","authors":"M. Abramo, E. Roy, S. LeCours","doi":"10.1109/RELPHY.1992.187663","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187663","url":null,"abstract":"An attempt to develop and to optimize reactive ion etch processes for failure analysis applications is discussed. Reactive ion etching (RIE) provides several advantages over wet and plasma etching. Delayering of interlevel dielectric and passivation films with RIE results in anisotropic sidewalls. This insures that no metal is lifted, allowing mechanical and contactless multilevel probing. By adjusting process parameters, a wider range of selectivity to underlying films was realized than with either traditional wet or plasma etching. The results obtained with polysilicon, silicon dioxide, and organic passivation films are given.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129764445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Acoustic evaluation of electronic plastic packages 电子塑料封装的声学评价
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187662
J. Siettmann, R. Dias, K. Fiebelkorn
{"title":"Acoustic evaluation of electronic plastic packages","authors":"J. Siettmann, R. Dias, K. Fiebelkorn","doi":"10.1109/RELPHY.1992.187662","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187662","url":null,"abstract":"Describe a technique of C-mode scanning acoustic microscope (CSAM) image acquisition. The role acoustic reflected wave analysis plays in the acquisition of CSAM images is considered. The effect that mold compound thickness and transducer choice have on the resolution of leadframe features in plastic packages is illustrated. Potential applications of acoustic reflected wave analysis are presented.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129239550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Dislocation based mechanisms in electromigration 基于位错的电迁移机制
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187649
B. R. Livesay, N. E. Donlin, A. K. Garrison, H. Harris, J. Hubbard
{"title":"Dislocation based mechanisms in electromigration","authors":"B. R. Livesay, N. E. Donlin, A. K. Garrison, H. Harris, J. Hubbard","doi":"10.1109/RELPHY.1992.187649","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187649","url":null,"abstract":"The role of dislocation dynamics in electromigration degradation is presented based on both theoretical models and experimental data. Interactions between high current densities and dislocations were studied using micromechanics measurements, in situ scanning electron microscopy, and transmission electron microscopy, microstructural studies and calculations of dislocation interaction phenomena. Correlations between thin-film strengthening, electroplasticity, dislocation observations, and the crystallography of whiskers are presented.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123500734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Impact of inter-metal-oxide deposition condition on NMOS and PMOS transistor hot carrier effect 金属间氧化物沉积条件对NMOS和PMOS晶体管热载子效应的影响
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187635
C. Jiang, C. Hu, C.-H. Chen, P. Tseng
{"title":"Impact of inter-metal-oxide deposition condition on NMOS and PMOS transistor hot carrier effect","authors":"C. Jiang, C. Hu, C.-H. Chen, P. Tseng","doi":"10.1109/RELPHY.1992.187635","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187635","url":null,"abstract":"The hot carrier effect of NMOSFETs and PMOSFETs has been investigated for different inter-metal-oxide (IMO) deposition conditions. It was found that the hot carrier effect lifetime of NMOSFETs using silane-based oxide deposition can be more than two orders of magnitude longer than that of NMOSFETs using tetraethylorthosilicate (TEOS) based deposition, while PMOSFETs exhibit more net electron trapping. TEOS IMO apparently increases the rate of hole trapping and hold-induced generation of bulk and interface traps. A Si-rich oxide deposition condition improves the hot carrier lifetime, but does not overcome the deleterious effect of an additional TEOS oxide layer. IMO only influences the charge trapping properties of gate oxide interface in the vicinity of the source-drain gate edges and therefore affects short channel devices more strongly.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131209956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Hot-electron-induced input offset voltage degradation in CMOS differential amplifiers 热电子诱导的CMOS差分放大器输入偏置电压退化
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187626
S.Z. Mohamedi, V. Chan, J. Park, F. Nouri, B. Scharf, J. E. Chung
{"title":"Hot-electron-induced input offset voltage degradation in CMOS differential amplifiers","authors":"S.Z. Mohamedi, V. Chan, J. Park, F. Nouri, B. Scharf, J. E. Chung","doi":"10.1109/RELPHY.1992.187626","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187626","url":null,"abstract":"A key figure of merit for high-precision/performance circuit applications is the input offset voltage, which is defined as the differential input voltage necessary to produce a zero differential output voltage. The impact of hot-electron degradation on the input offset voltage of a CMOS differential amplifier is characterized. The NMOS and PMOS transistors examined were fabricated using a 1.5- mu m LOCOS-isolated, double-metal, BiCMOS process for mixed signal applications. Using the concept of a virtual source-coupled pair, may aspects of V/sub Offset/ degradation are determined directly from individual device measurements. Techniques are developed for estimating V/sub Offset/ device lifetime under operational conditions from accelerated stress measurements. Analytical models for V/sub Offset/ degradation are also developed. Performance and reliability tradeoffs for different CMOS differential amplifier designs are analyzed.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131279496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
X-ray analysis of the package cracking during reflow soldering 回流焊过程中封装裂纹的x射线分析
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187644
M. Harada, S. Tanigawa, S. Ohizumi, K. Ikemura
{"title":"X-ray analysis of the package cracking during reflow soldering","authors":"M. Harada, S. Tanigawa, S. Ohizumi, K. Ikemura","doi":"10.1109/RELPHY.1992.187644","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187644","url":null,"abstract":"A new X-ray system tests cracking in QFP (quad flat pack) and SOJ, (small outline J-leaded pack) packages. It has been found that package cracking starts in two regions of delamination: (1) between the die pad and the chip, in the case of newly developed resins; and (2) between the die pad and the resin, in the case of older forms of resin. During experimentation, it was found that cracking in SOJ related to the newer resin is caused by vaporization of moisture in the materials attached to the die pad. This was verified through simulation.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123474180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
The statistical distribution of 1/f/sup 2/ noise in thin metal films under accelerated electromigration test conditions 加速电迁移试验条件下金属薄膜中1/f/sup / 2/噪声的统计分布
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187650
L. Head, B. Le, C.T.M. Chen, J. Świa̧tkowski
{"title":"The statistical distribution of 1/f/sup 2/ noise in thin metal films under accelerated electromigration test conditions","authors":"L. Head, B. Le, C.T.M. Chen, J. Świa̧tkowski","doi":"10.1109/RELPHY.1992.187650","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187650","url":null,"abstract":"The levels of excess current noise in metal thin films under accelerated stress conditions have been shown to correlate well with traditional electromigration lifetimes determined from median time to failure (MTF) tests. The goals of this study were to obtain the magnitudes of a series of noise measurements taken on a metal-thin-film stripe or a set of metal-thin-film stripes where the activation energies for the noise generation processes could be assumed to be normally distributed. The values obtained from the noise measurements were determined, and the statistical distribution of the reciprocals of these values was examined. In particular, an attempt was made to determine the goodness' of fit between the 1f//sup 2/ noise measurement data and the theoretical lognormal distribution. It is shown that the reciprocal of the 1/f/sup 2/ noise magnitudes, taken at a single frequency, for a large group of identical films can also be modeled by the lognormal distribution.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123191723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparison of delamination effects between temperature cycling test and highly accelerated stress test, in plastic packaged devices 塑料封装器件中温度循环试验与高加速应力试验的分层效应比较
30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI: 10.1109/RELPHY.1992.187643
R. van Gestel, K. de Zeeuw, L. van Gemert, E. Bagerman
{"title":"Comparison of delamination effects between temperature cycling test and highly accelerated stress test, in plastic packaged devices","authors":"R. van Gestel, K. de Zeeuw, L. van Gemert, E. Bagerman","doi":"10.1109/RELPHY.1992.187643","DOIUrl":"https://doi.org/10.1109/RELPHY.1992.187643","url":null,"abstract":"Two reliability stress tests were performed on, plastic packaged test chips consisting of a temperature cycle test (TCT) of 500 cycles and a highly accelerated stress test (HAST) of 300 h with bias voltage. Before and after the tests delamination of the die-mold interface was examined with scanning acoustic tomography. On these test chips bondwire failures, mechanical deformation, and corrosion test structures have also been measured. It appeared that 300 h of HAST nearly destroyed the adhesion between chip and mold whereas a 500 TCT caused delamination only to initiate from the die corners. The HAST caused a large number of corrosion failures, and the TCT a number of mechanical deformation failures.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128056799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
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