Dislocation based mechanisms in electromigration

B. R. Livesay, N. E. Donlin, A. K. Garrison, H. Harris, J. Hubbard
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引用次数: 9

Abstract

The role of dislocation dynamics in electromigration degradation is presented based on both theoretical models and experimental data. Interactions between high current densities and dislocations were studied using micromechanics measurements, in situ scanning electron microscopy, and transmission electron microscopy, microstructural studies and calculations of dislocation interaction phenomena. Correlations between thin-film strengthening, electroplasticity, dislocation observations, and the crystallography of whiskers are presented.<>
基于位错的电迁移机制
基于理论模型和实验数据,提出了位错动力学在电迁移降解中的作用。利用微观力学测量、原位扫描电镜、透射电镜、微观结构研究和位错相互作用现象的计算,研究了高电流密度与位错之间的相互作用。介绍了薄膜强化、电塑性、位错观察和晶须晶体学之间的关系。
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