发布求助
文献互助 智能选刊 最新文献

2009 European Microwave Integrated Circuits Conference (EuMIC)最新文献

筛选
英文 中文
High Q tunable cavity using dielectric less RF-MEMS varactors 使用无介电RF-MEMS变容器的高Q可调谐腔
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296111
R. Stefanini, M. Chatras, A. Pothier, J. Orlianges, P. Blondy
{"title":"High Q tunable cavity using dielectric less RF-MEMS varactors","authors":"R. Stefanini, M. Chatras, A. Pothier, J. Orlianges, P. Blondy","doi":"10.23919/eumc.2009.5296111","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296111","url":null,"abstract":"This paper presents first experimental results on high Q MEMS tunable microwave cavity using RF-MEMS switched varactors. MEMS varactors that have been used in this work are based on a dielectric less tunable cantilever actuator, with good reliability and well-established fabrication process. It is shown that one can obtain large Q using type of component, with measured Qu between 550 and 850 for a tuning range of 500 MHz around 5 GHz.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122355545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Dielectric charging and thermally activated processes in MEMS capacitive switches MEMS电容开关中的介电充电和热激活过程
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296573
G. Papaioannou, N. Tavasolian, C. Goldsmith, J. Papapolymerou
{"title":"Dielectric charging and thermally activated processes in MEMS capacitive switches","authors":"G. Papaioannou, N. Tavasolian, C. Goldsmith, J. Papapolymerou","doi":"10.23919/eumc.2009.5296573","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296573","url":null,"abstract":"The paper investigates dielectric charging effects for capacitive RF MEMS switches with SiO2 as the dielectric material. Two different actuation schemes are implemented in order to incorporate and better understand the charging history over time. Experimental results indicate that regardless of the actuation scheme the charging is thermally in principle, and that the activation energy decreases as the voltage sweep rate increases.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126283376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Tunable microwave amplifier using a compact MEMS impedance matching network 采用紧凑MEMS阻抗匹配网络的可调谐微波放大器
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296314
F. Domingue, A. Kouki, R. Mansour
{"title":"Tunable microwave amplifier using a compact MEMS impedance matching network","authors":"F. Domingue, A. Kouki, R. Mansour","doi":"10.23919/eumc.2009.5296314","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296314","url":null,"abstract":"This paper presents the design of a reconfigurable RF amplifier based on compact tunable MEMS impedance matching network for low frequency applications. The amplifier uses a pHEMT transistor fabricated in GaAs technology while the MEMS circuits were fabricated using a dedicated RF MEMS process. The reconfigurable network is based on a slow-wave distributed MEMS transmission line (SW-DMTL) presenting a wide impedance coverage at low frequencies. The performance of the amplifier is controlled for frequencies from 3.5 to 9 GHz while the gain is kept around the maximum available stable gain. Moreover, the amplifier operates under various source impedance conditions.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117184456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Pulse RF operation of MEMS capacitive switches MEMS电容开关的脉冲射频操作
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5295946
C. Palego, Jie Deng, S. Halder, Zhen Peng, J. Hwang, D. Forehand, C. Goldsmith
{"title":"Pulse RF operation of MEMS capacitive switches","authors":"C. Palego, Jie Deng, S. Halder, Zhen Peng, J. Hwang, D. Forehand, C. Goldsmith","doi":"10.23919/eumc.2009.5295946","DOIUrl":"https://doi.org/10.23919/eumc.2009.5295946","url":null,"abstract":"Shifts in the pull-in voltage of electrostatically actuated MEMS capacitive switches were characterized under pulse RF excitation, which allowed the electrical and thermal effects of the RF excitation to be separated. The resulted multiphysics model accurately predicted the pull-in voltage shift under different pulse powers and duty cycles. By comparing the power capacity of switches made of aluminum or molybdenum, a new figure of merit is proposed for selecting the optimum material for the fabrication of high-power MEMS capacitive switches.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125589142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modelling and design of a wideband 6–18 GHz GaN Resistive Mixer 宽带6-18 GHz GaN阻性混频器的建模与设计
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.1109/EUMC.2009.5295933
V. Di Giacomo, N. Thouvenin, C. Gaquière, A. Santarelli, F. Filicori
{"title":"Modelling and design of a wideband 6–18 GHz GaN Resistive Mixer","authors":"V. Di Giacomo, N. Thouvenin, C. Gaquière, A. Santarelli, F. Filicori","doi":"10.1109/EUMC.2009.5295933","DOIUrl":"https://doi.org/10.1109/EUMC.2009.5295933","url":null,"abstract":"A wideband hybrid AlGaN/GaN Resistive Mixer has been designed and simulated. The cold-FET mixer is based on a 2*100*0.25 µm2 AlGaN/GaN HEMT in a single-ended circuit topology. An application-specific empirical transistor model has been extracted and validated in small- and large-signal conditions, in order to carry out the mixer design and simulations. This mixer presents an IF bandwidth of 6 GHz with a conversion loss ≪ 16 dB for each RF and LO frequency choice from 6 up to 18 GHz.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114724228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
RF MEMS-MMIC building blocks for emerging wireless systems and RF-sensing applications 用于新兴无线系统和射频传感应用的RF MEMS-MMIC构建模块
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296438
R. Malmqvist, C. Samuelsson, P. Rantakari, P. Frijlink, D. Smith, W. Simon, J. Saijets, T. Vaha-Heikkila, R. Baggen
{"title":"RF MEMS-MMIC building blocks for emerging wireless systems and RF-sensing applications","authors":"R. Malmqvist, C. Samuelsson, P. Rantakari, P. Frijlink, D. Smith, W. Simon, J. Saijets, T. Vaha-Heikkila, R. Baggen","doi":"10.23919/eumc.2009.5296438","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296438","url":null,"abstract":"In this paper we present the main scope and initial results obtained within a pan-European research activity aiming at a successful monolithic integration of innovative RF MEMS switches into a standard GaAs MMIC process technology. Measured results of a fabricated ohmic contact type of RF MEMS switch developed by the OMMIC foundry show promising results e.g. in terms of low RF losses (0.2–0.4 dB is obtained from DC up to 30 GHz). The experimentally verified GaAs based RF MEMS switch has further been used to design low-loss MMIC building blocks such as switching, matching and phase shifting circuits for various RF applications up to 40 GHz.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129242815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
X-Band GaN-HEMT LNA performance versus robustness trade-off x波段GaN-HEMT LNA性能与鲁棒性权衡
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296145
A. Bettidi, F. Corsaro, A. Cetronio, A. Nanni, M. Peroni, P. Romanini
{"title":"X-Band GaN-HEMT LNA performance versus robustness trade-off","authors":"A. Bettidi, F. Corsaro, A. Cetronio, A. Nanni, M. Peroni, P. Romanini","doi":"10.23919/eumc.2009.5296145","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296145","url":null,"abstract":"In this paper design, fabrication and test of three X-Band robust LNA MMICs in microstrip GaN technology are presented to better understand the key aspects of performance versus robustness trade-off for said components. In particular LNAs with different number of amplification stages, input device gate peripheries and topologies have been evaluated with the objective of achieving in the 8–11 GHz frequency range a NF better than 2.5dB, associated gain of circa 20 dB and overdrive power survivability better than 38 dBm.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117308202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
Highly integrated and solderless LTCC based C-Band T/R Module 基于高集成和无焊LTCC的c波段T/R模块
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296520
R. Giordani, M. Amici, A. Barigelli, Franco Conti, M. Del Marro, M. Feudale, M. Imparato, A. Suriani
{"title":"Highly integrated and solderless LTCC based C-Band T/R Module","authors":"R. Giordani, M. Amici, A. Barigelli, Franco Conti, M. Del Marro, M. Feudale, M. Imparato, A. Suriani","doi":"10.23919/eumc.2009.5296520","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296520","url":null,"abstract":"This paper describes a C-Band T/R Module (TRM) developed by Thales Alenia Space Italia as element of the Electronic Front-End (EFE) for Synthetic Aperture Radar (SAR) antenna developed for Sentinel-1 Program under the responsibility of the European Commission and the European Space Agency in the frame of the Global Monitoring for Environment and Security (GMES).","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115831361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Class-A power amplifier design technique based on electron device low-frequency characterization 基于电子器件低频特性的a类功率放大器设计技术
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296393
A. Raffo, S. Di Falco, V. Vadalà, F. Scappaviva, G. Vannini
{"title":"Class-A power amplifier design technique based on electron device low-frequency characterization","authors":"A. Raffo, S. Di Falco, V. Vadalà, F. Scappaviva, G. Vannini","doi":"10.23919/eumc.2009.5296393","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296393","url":null,"abstract":"In this paper, a new approach to class-A power amplifier design is proposed. Such a technique, which is mostly based on low-frequency characterisation, allows to reach the same design goals obtained through expensive nonlinear setups operating at microwave frequencies. In order to demonstrate the effectiveness of the proposed design technique, a practical example of class-A power amplifier design, based on GaN technology, is deeply investigated.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133052129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
PWM bandwidth and wireless system peak-to-minimum power ratio PWM带宽和无线系统的峰最小功率比
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5295955
P. Cruz, N. Carvalho
{"title":"PWM bandwidth and wireless system peak-to-minimum power ratio","authors":"P. Cruz, N. Carvalho","doi":"10.23919/eumc.2009.5295955","DOIUrl":"https://doi.org/10.23919/eumc.2009.5295955","url":null,"abstract":"This paper presents a relationship between peak-to-minimum power ratio, PMPR, and pulse-width-modulation, PWM, bandwidth, i.e., the digital PWM sampling frequency.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131560288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信