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2009 European Microwave Integrated Circuits Conference (EuMIC)最新文献

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Temperature drift compensation technique for a hybrid LTCC oscillator at 20GHz 20GHz混合LTCC振荡器的温度漂移补偿技术
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296305
T. Baras, A. Jacob
{"title":"Temperature drift compensation technique for a hybrid LTCC oscillator at 20GHz","authors":"T. Baras, A. Jacob","doi":"10.23919/eumc.2009.5296305","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296305","url":null,"abstract":"A temperature drift compensation method for a K-band LTCC hybrid voltage-controlled oscillator is presented. After an initial review of the vertically integrated resonator structure, an extracted temperature drift profile of the ceramic substrate is utilized to estimate the temperature dependence of the oscillation frequency of the entire circuit. Adding a low sensitivity tuning structure combined with a low complexity thermistor-network, the temperature shift can be significantly reduced from ±50MHz to about ±5MHz in an interval of 50K, entirely compensating the drift at around room temperature. Finally, the impact of the additional tuning structure on the phase noise performance is analyzed.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116344469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
40 to 85GHz power amplifier MMICs using an optical lithography based low cost GaAs PHEMT process 40至85GHz功率放大器mmic采用基于光学光刻的低成本GaAs PHEMT工艺
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5295913
K. Fujii, J. Stanback, H. Morkner
{"title":"40 to 85GHz power amplifier MMICs using an optical lithography based low cost GaAs PHEMT process","authors":"K. Fujii, J. Stanback, H. Morkner","doi":"10.23919/eumc.2009.5295913","DOIUrl":"https://doi.org/10.23919/eumc.2009.5295913","url":null,"abstract":"An optical photo lithography based 0.15µm GaAs PHEMT process and 2mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax=575mA/mm, BVgd=14V, and 753mW/mm of output power density at P-1 condition at 18GHz. Design and test results for balanced and single-ended power amplifiers (PA) for 40 to 85GHz applications are described as process capability verification. Balanced PA MMICs shows 18dB of small-signal gain and 17dBm of output power up to 85GHz frequencies. MMIC test results verified the process capability to manufacture MMIC devices for applications up to 90GHz.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115064546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Temperature dependence of ESD charging in RF MEMS capacitive switch 射频MEMS电容开关ESD充电温度依赖性研究
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296443
J. Ruan, G. Papaioannou, N. Nolhier, D. Trémouilles, F. Coccetti, R. Plana
{"title":"Temperature dependence of ESD charging in RF MEMS capacitive switch","authors":"J. Ruan, G. Papaioannou, N. Nolhier, D. Trémouilles, F. Coccetti, R. Plana","doi":"10.23919/eumc.2009.5296443","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296443","url":null,"abstract":"The paper presents analyses of the dielectric charging in RF-MEMS devices that have been submitted to electrostatic discharge (ESD) stress. A wafer level Human Body Model (HBM) tester has been used to generate discharge signals. The investigation intends to understand the failure mechanism and the charging mechanism in capacitive RF-MEMS due to ESD. The experiments were done on MEMS and also on Metal-Insulator-Metal (MIM) devices, fabricated on the same wafer in order to get insight on failure modes and charging models. Furthermore, temperature ranges from 300 K to 330 K allows the understanding of physical mechanisms that may be responsible for the device's reliability.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"56 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125993914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
HMIC wafer level packaging HMIC晶圆级封装
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296090
T. Boles, D. Hoag, M. Barter, R. Giacchino, Paul Hogan, J. Goodrich
{"title":"HMIC wafer level packaging","authors":"T. Boles, D. Hoag, M. Barter, R. Giacchino, Paul Hogan, J. Goodrich","doi":"10.23919/eumc.2009.5296090","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296090","url":null,"abstract":"HMIC, an acronym for Heterolithic Microwave Integrated Circuits, is fundamentally a wafer level substrate which combines low, RF loss tangent glass with micromachined silicon to produce three dimensional circuitry with the capability to make RF, DC, and thermal vias as the device input and output. Using this technology both active and passive RF devices have been produced which have demonstrated excellent high frequency performance over a very broad range of frequencies from 1 MHz to as high as 110 GHz. This paper describes the development of a unique microwave and mmW packaging technique based upon the broadband high frequency properties of the basic HMIC technology. More specifically the results of utilizing the high frequency, 3-dimensional integration properties to provide a packaging medium that will enable active components, whether in flip chip or bondable configurations and including silicon, GaAs, or InP mixed materials, to be combined to create a surface mount wafer level multichip module is presented. It will be shown that this basic HMIC technology can also be applied to enable the incorporation of a hermetic solder seal silicon lid.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123934726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wide band high linearity and high isolation mixer MMIC developed on GaAs 0.25µm Power pHEMT technology 基于GaAs 0.25µm Power pHEMT技术开发的宽带高线性和高隔离混频器MMIC
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296270
M. Dinari, V. Serru, M. Camiade, C. Teyssandier, D. Baglieri, E. Durand, B. Mallet-Guy, J. Plaze
{"title":"Wide band high linearity and high isolation mixer MMIC developed on GaAs 0.25µm Power pHEMT technology","authors":"M. Dinari, V. Serru, M. Camiade, C. Teyssandier, D. Baglieri, E. Durand, B. Mallet-Guy, J. Plaze","doi":"10.23919/eumc.2009.5296270","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296270","url":null,"abstract":"In the frame of radar and warfare applications, a Monolithic Microwave Integrated Circuit (MMIC) Mixer has been developed using a UMS GaAs 0.25 µm Power pHEMT Technology. The mixer presented in this document exhibits at the same time wide frequency band, high isolation and high linearity. In the 6–18GHz frequency band, the mixer demonstrates 25dB for the isolations, an input RF compression point higher than 16dBm and an Input IP3 of 25dBm. To our knowledge these performances are among the highest reported on a fully integrated GaAs MMIC.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121511183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape 通过控制栅源电压波形来提高GaN功率hemt的效率
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296334
A. Ramadan, A. Martin, T. Reveyrand, J. Nebus, P. Bouysse, L. Lapierre, J. Villemazet, S. Forestier
{"title":"Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape","authors":"A. Ramadan, A. Martin, T. Reveyrand, J. Nebus, P. Bouysse, L. Lapierre, J. Villemazet, S. Forestier","doi":"10.23919/eumc.2009.5296334","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296334","url":null,"abstract":"This paper presents a technique to improve the power added efficiency (PAE) of GaN power amplifiers by an appropriate shaping of the gate source voltage waveform. The proposed technique is based on second harmonic injection at the transistor input. It is applied here to a 15W GaN HEMT die from Cree that has been characterized using an harmonic load pull test bench at L-band.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115767522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
A new approach for nonlinear metric estimation of limit cycle amplifiers 极限环放大器非线性度量估计的一种新方法
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296101
F. A. Malekzadeh, Reza Mahmoudi, A. Roermund
{"title":"A new approach for nonlinear metric estimation of limit cycle amplifiers","authors":"F. A. Malekzadeh, Reza Mahmoudi, A. Roermund","doi":"10.23919/eumc.2009.5296101","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296101","url":null,"abstract":"Limit Cycle amplifiers are promising solutions to combine high linearity and efficiency, thanks to the efficient switch mode amplifier inside. Therefore an insightful and efficient analysis method is required for these systems. In this paper, a novel Hermite series based statistical approach for nonlinear analysis of the limit cycle amplifier system with real Gaussian excitation is presented. The proposed algorithm gives both in-band and out of band nonlinear distortions through them same approach. The approach is applied to an 802.11 g OFDM signal to calculate EVM, ACPR and output power. The method is validated by good agreement between the extracted results and ADS circuit envelope results.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132619936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Wafer Scale Package construction and usage for RF through millimeter wave applications 从射频到毫米波应用的晶圆级封装结构和使用
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296016
H. Morkner
{"title":"Wafer Scale Package construction and usage for RF through millimeter wave applications","authors":"H. Morkner","doi":"10.23919/eumc.2009.5296016","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296016","url":null,"abstract":"WSP (Wafer Scale Packaging) has come on the market for commercial applications in 2008. But how is a WSP constructed and what are its advantages over traditional surface mount techniques? This paper explores how WSP is applied to traditional GaAs PHEMT wafer manufacture as implemented by Avago Technologies in the first volume commercial offering of WSP in 2008. The paper details the general construction and advantages of WSP over plastic, laminate, and ceramic alternate solutions. These advantages include cost, microwave performance, thermal conductance, and size. Detailed examples are shown of products on the general market today and future developments in package and component design.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115211067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
12.5mW 48GHz CMOS image-rejection filter with 1GHz tuning range 12.5mW 48GHz CMOS图像抑制滤波器，1GHz调谐范围
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5295929
Sho Ohashi, A. Oncu, M. Fujishima
{"title":"12.5mW 48GHz CMOS image-rejection filter with 1GHz tuning range","authors":"Sho Ohashi, A. Oncu, M. Fujishima","doi":"10.23919/eumc.2009.5295929","DOIUrl":"https://doi.org/10.23919/eumc.2009.5295929","url":null,"abstract":"A large down-conversion of the carrier signal is required in a millimeter-wave receiver. However, since a steep filter in the millimeter-wave band is not available, a heterodyne architecture is commonly used, which increases the power consumption of the receiver. To realize low-power consumption in a millimeter-wave receiver, low intermediate frequency conversion is suitable but requires a millimeter-wave image-rejection filter. In this study, we adopt a high-Q resonator tank enhanced by a negative conductance, using a circuit that includes a transmission line, which defines the signal propagation area of the millimeter wave. As a result, a maximum Q factor of 120, a minimum bandwidth of 0.4GHz, a maximum gain of 20dB and a tuning range of 1GHz are realized with a power consumption of 12.5mW, where the gain, Q factor and center frequency are tunable by external control. The proposed filter realizes a low intermediate frequency in a millimeter-wave receiver and is expected to contribute to the reduction of power consumption in the receiver.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"242 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127479022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-band phase-shifting dual-output balanced amplifier MMIC x波段移相双输出平衡放大器
2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296029
G. van der Bent, T. de Boer, R. van Dijk, M. W. van der Graaf, A. P. de Hek, F. V. van Vliet
{"title":"X-band phase-shifting dual-output balanced amplifier MMIC","authors":"G. van der Bent, T. de Boer, R. van Dijk, M. W. van der Graaf, A. P. de Hek, F. V. van Vliet","doi":"10.23919/eumc.2009.5296029","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296029","url":null,"abstract":"An X-band MMIC containing two 6 bit phase shifters and 1 Watt amplifiers in balanced configuration has been developed. The device has two output ports. The balance between the output powers of the two ports can be controlled via de phase shifter settings. This MMIC could be applied in systems where variable linear polarisation control is required, such as polarimetric radar or satellite communication systems. The MMIC has been developed in the 6-inch 0.5 µm power GaAs pHEMT process (PP50–11) of WIN Semiconductors.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133982749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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