2009 European Microwave Integrated Circuits Conference (EuMIC)最新文献

A new nonlinear HEMT model for AlGaN/GaN switch applications 一种新的AlGaN/GaN开关非线性HEMT模型

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-10-30 DOI: 10.1017/S1759078710000541

O. Jardel, G. Callet, C. Charbonniaud, J. Jacquet, N. Sarazin, E. Morvan, R. Aubry, M. di Forte Poisson, J. Teyssier, S. Piotrowicz, R. Quéré

{"title":"A new nonlinear HEMT model for AlGaN/GaN switch applications","authors":"O. Jardel, G. Callet, C. Charbonniaud, J. Jacquet, N. Sarazin, E. Morvan, R. Aubry, M. di Forte Poisson, J. Teyssier, S. Piotrowicz, R. Quéré","doi":"10.1017/S1759078710000541","DOIUrl":"https://doi.org/10.1017/S1759078710000541","url":null,"abstract":"We present here a new set of equations for modeling the I-V characteristics of FETs, particularly optimized for AlGaN/GaN HEMTs. These equations describe the whole characteristics from negative to positive breakdown loci, and reproduce the current saturation at high level. Using this model allow reducing the modeling procedure duration when a same transistor topology is used for several applications in a T/R module. It can even be used for switches design, witch is the most demanding application in terms of I-V swing. Moreover, a particular care was taken to model accurately the first third orders of the current derivatives, which is important for multitone applications. There are 18 parameters for the main current source (and 6 for both diodes Igs and Igd). This can be compared to the Tajima's equations based Model [1] (13 parameters) or to the Angelov Model (14 parameters) [2], which only fit the I-V characteristics for positive values of Vds. We will detail here the model formulation, and show some measurements/modeling comparisons on both I-V and [S]-parameters obtained for a 8×75 µm GaN HEMT.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129805351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 43

New fabrication process to manufacture RF-MEMS and HEMT on GaN/Si substrate 在GaN/Si衬底上制造RF-MEMS和HEMT的新工艺

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296188

F. Crispoldi, A. Pantellini, S. Lavanga, A. Nanni, P. Romanini, L. Rizzi, P. Farinelli, C. Lanzieri

引用次数: 7

Semi-analytical formulation for the phase-noise analysis of injection-locked push-push oscillators 锁注入推推振荡器相位噪声分析的半解析公式

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296102

E. Fernandez, M. Pontón, F. Ramírez, S. Sancho, A. Suárez

引用次数: 4

S-band discrete and MMIC GaN power amplifiers s波段分立和MMIC GaN功率放大器

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296325

J. Nilsson, N. Billstrom, N. Rorsman, P. Romanini

引用次数: 16

A Wideband 90° continuous phase shifter for 60GHz phased array transceiver in 90nm CMOS technology 基于90nm CMOS技术的60GHz相控阵收发器宽带90°连续移相器

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5295981

B. Biglarbegian, M. Nezhad-Ahmadi, M. Fakharzadeh, S. Safavi-Naeini

引用次数: 21

A high performance DC-20 GHz SPDT switch in a low cost plastic QFN package 采用低成本塑料QFN封装的高性能dc - 20ghz SPDT开关

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296295

Q. Xiao, George Samiotes, T. Galluccio, B. Rizzi

引用次数: 13

Sub-nanosecond greater-than-10V compact pulse amplifier for ultra-wideband application 用于超宽带应用的亚纳秒级大于10v的紧凑型脉冲放大器

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5295986

R. Jin, S. Halder, J. Hwang, C. Law

引用次数: 4

A compact, low-power 40 Gbit/s differential laser driver in sige BiCMOS technology 采用超大BiCMOS技术的小型、低功耗40 Gbit/s差分激光驱动器

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5296521

C. Knochenhauer, S. Hauptmann, C. Scheytt, F. Ellinger

引用次数: 5

When new needs for satellite payloads meet with new filters architecture and technologies 当卫星有效载荷的新需求满足新的滤波器结构和技术时

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.1109/EUMC.2009.5296368

H. Leblond, J. Villemazet, J. Cazaux, D. Pacaud, J. Herren, L. Rigaudeau, L. Lapierre, D. Baillargeat, P. Blondy, S. Bila, S. Verdeyme, C. Delage, C. Quendo, J. Favennec, B. Potelon, É. Rius, F. Seyfert, S. Pacchini

{"title":"When new needs for satellite payloads meet with new filters architecture and technologies","authors":"H. Leblond, J. Villemazet, J. Cazaux, D. Pacaud, J. Herren, L. Rigaudeau, L. Lapierre, D. Baillargeat, P. Blondy, S. Bila, S. Verdeyme, C. Delage, C. Quendo, J. Favennec, B. Potelon, É. Rius, F. Seyfert, S. Pacchini","doi":"10.1109/EUMC.2009.5296368","DOIUrl":"https://doi.org/10.1109/EUMC.2009.5296368","url":null,"abstract":"To cope with the economical and technical demands of the market and to compete with terrestrial networks, satellite operators and manufacturers will need to upgrade their satellites and services. Nowadays, most of commercial satellite payloads are designed for a predetermined service and lack flexibility. Future communication satellites have to become more flexible and shall provide capacity at the lowest cost. The upcoming new needs lead to a major impact on the architecture at satellite payload level. RF and microwave filters are one of the most affected by the derived equipment specifications. The required out-of-band rejection close to the useful bandwidth will become more stringent (better than 40 dBc) while saving size and mass by more than 30% compared to the heavy mechanical cavities used today. Advanced technologies, like ceramic 3D stereolithography or Surface Integrated Waveguide technology presented in this paper are very promising solutions to overcome these requirements. Moreover, tunable filters could be a relevant option to simplify payload architectures by giving more flexibility on the frequency plan and/or bandwidth. Today, agile filters are not available in space equipments but some new technologies presented in this paper, such as MEMS technologies or ceramic based flexible filters, have now the capability to comply with space environment constraints. Finally, new synthesis method techniques could help saving mass (by 30% or more) of future OMUX equipments.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"90 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131829724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-Band 宽带AlGaN/GaN高功率放大器，鲁棒lna和l波段功率开关

2009 European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2009-09-01 DOI: 10.23919/eumc.2009.5295998

S. Piotrowicz, B. Mallet-Guy, E. Chartier, J. Jacquet, O. Jardel, D. Lancereau, G. Le Coustre, E. Morvan, R. Aubry, C. Dua, M. Oualli, M. Richard, N. Sarazin, M. diForte-Poisson, J. Delaire, Y. Mancuso, S. Delage

引用次数: 7