A. Mukherjee, S. Vatti, M. Kiziroglou, R. Moseley, C. Papavassiliou, A. Holmes, E. Yeatman
{"title":"Integration of self-assembled inductors with CMOS LC oscillators","authors":"A. Mukherjee, S. Vatti, M. Kiziroglou, R. Moseley, C. Papavassiliou, A. Holmes, E. Yeatman","doi":"10.23919/eumc.2009.5296267","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296267","url":null,"abstract":"The quality factor (Q) of integrated inductors is of great importance to radio frequency applications. Monolithic integration of out-of-plane Au inductors with Complementary Metal-Oxide-Semiconductor (CMOS) LC oscillators is reported in this paper. The recently developed self-assembly process involves in-plane fabrication of Au inductors and subsequent rotation of the structure by surface tension forces of a melting Sn hinge. The CMOS compatibility of this process is demonstrated through the integration of an LC oscillator with the self-assembled inductor using post-CMOS processing. At a 1.48 GHz oscillation frequency, a phase noise of −95 dBc/Hz is reported at a 100 kHz frequency offset. Obtained results show this technique to be promising for the integration of high Q inductors with commercial RF systems.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131503936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Alternative architectures for narrowband varactor-tuned bandpass filters","authors":"A. Guyette","doi":"10.23919/eumc.2009.5296161","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296161","url":null,"abstract":"A unique design approach for narrowband tunable bandpass filters is presented which focuses on engineering the tuned center-frequency dependence of the coupling coefficient between adjacent resonators. New architectures are presented, and equations for the coupling coefficient are derived from energy expressions. A microstrip prototype with independently-tunable center frequency and bandwidth was built and tested, and exhibits excellent performance.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126933061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Scarbrough, C. Goldsmith, J. Papapolymerou, Yuan Li
{"title":"Miniature microwave RF MEMS tunable waveguide filter","authors":"D. Scarbrough, C. Goldsmith, J. Papapolymerou, Yuan Li","doi":"10.23919/eumc.2009.5296169","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296169","url":null,"abstract":"This paper presents an RF MEMS tunable filter implemented in waveguide. A compact waveguide topology was chosen to make use of high-Q cavity resonators for the creation of a low-loss, two-pole filter. The filter results in an insertion loss of 4.7–5.8 dB over the tuning range 10.12–10.33 GHz with a relative bandwidth of 0.42–0.67%. This design demonstrates an unloaded quality factor of 169–319 over the tunable frequency range with the potential to exceed 500.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"55 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120808989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Concurrent dual band 2.4/3.5GHz fully integrated power amplifier in 0.13µm CMOS technology","authors":"M. R. Ghajar, S. Boumaiza","doi":"10.23919/eumc.2009.5296307","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296307","url":null,"abstract":"this paper proposes novel dual-band matching network, suitable for the design of integrated concurrent dual band power amplifier in a multi-standard radiofrequency frontend. The effectiveness of the proposed dual band matching network was demonstrated through the implementation of a power amplifier operating at 2.4GHz and 3.5GHz in IBM 0.13µm CMOS technology. The designed 1.25mm×1.25mm dual band PA allowed for Power Added Efficiency (PAE) and output power of about 42% and more than 18dbm, respectively, at both frequencies.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133281255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Fernandez-Bolaños, C. Dehollain, S. Ayoz, P. Nicole, A. Ionescu
{"title":"Centre frequency and bandwidth tunable bandpass filter based on RF MEMS (10–14GHz)","authors":"M. Fernandez-Bolaños, C. Dehollain, S. Ayoz, P. Nicole, A. Ionescu","doi":"10.23919/EUMC.2009.5296302","DOIUrl":"https://doi.org/10.23919/EUMC.2009.5296302","url":null,"abstract":"This paper presents a novel tunable bandpass filter design with independent control of both the centre frequency and the bandwidth by means of analogue-series and digital-shunt MEMS capacitors. The filter is designed for operation in X and Ku bands with 4 pre-selected centre frequencies (from 10 GHz to 14 GHz) and with a bandwidth tunability of 70% (variable between 500 MHz and 1 GHz). The filter originally includes a fine frequency tuning to correct the centre frequency position that slightly and intrinsically shifts when tuning the bandwidth. An accurate physical circuit model is proposed and demonstrated to be in good agreement with the full-wave simulations. The devices are currently under fabrication and measurements results will be presented at the conference.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128654711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 60GHz LC-VCO module using flip-chip on a laminate substrate","authors":"M. Notten, H. Veenstra, X. Huang, J. Mills","doi":"10.23919/eumc.2009.5296112","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296112","url":null,"abstract":"For emerging mm-wave consumer applications such as high data-rate wireless communications at 60GHz and car radar at 76–81GHz, it is important to investigate the impact of module assembly on IC performance. Flip-chip is a promising candidate to meet requirements like low reflections, low insertion loss and low costs for mm-wave applications. This paper addresses the design, modeling and evaluation results of a 60GHz LC-VCO module using flip-chip. The impact of the substrate on on-chip CPW transmission lines and spiral inductors is studied based on the performance of a 60GHz LC-VCO. Since the inductor is part of the VCO resonator, a remarkable 10% increase in oscillation frequency occurs due to the nearby top-metal layer of the substrate. The IC is realized in a 0.25µm SiGe BiCMOS process. The 0.44mm thick substrate offers four copper signal layers.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116812779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characterizing drain current dispersion in GaN HEMTs with a new trap model","authors":"S. Albahrani, J. Rathmell, A. Parker","doi":"10.23919/eumc.2009.5296100","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296100","url":null,"abstract":"Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and terminal-potential dependency of the turn-on transients and their time constants. Because the time constants are extremely long they impact the measurement of true dc characteristics and contribute to knee walk-out. Temperature as a function of time is shown to be a vital consideration. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The relationship between trap potentials and terminal potentials is investigated.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115530810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fast physic based analysis of multifinger MOSFETs with SB-SP combined method for global modeling","authors":"G. Leuzzi, V. Stornelli","doi":"10.23919/eumc.2009.5296262","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296262","url":null,"abstract":"In this work, the frequency-domain Spectral Balance technique, which has been demonstrated to be a viable alternative to the mixed-domain Harmonic Balance technique is combined to the space-domain polynomial expansion of the physical quantities inside the semiconductor for the solution of steady-state nonlinear differential equations and applied to the physical analysis of multifinger MOSFET devices in linear and nonlinear regime and coupled to a commercial electromagnetic solver. This method allows a really fast CAD analysis both in DC and RF periodic regime especially when global modeling is required. A quasi-2D hydrodynamic formulation is given for a 0.35µm gate length with 10µm periphery three finger MOSFET; results are compared to those of a standard physical timedomain, a Harmonic Balance and Spectral Balance for time comparison. Moreover S-parameter comparisons with a commercial CAD tools with a compact model for circuit analysis are also given.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"85 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120836379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Rizzoli, Giacomo Bichicchi, A. Costanzo, F. Donzelli, D. Masotti
{"title":"CAD of multi-resonator rectenna for micro-power generation","authors":"V. Rizzoli, Giacomo Bichicchi, A. Costanzo, F. Donzelli, D. Masotti","doi":"10.23919/eumc.2009.5296567","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296567","url":null,"abstract":"We introduce a compact, lightweight and highly efficient multi-resonator rectenna (rectifying antenna) designed to harvest the RF energy really obtainable in humanized environments. Such sources, radiated from cell phones, radio transmitters and Wi-Fi equipments, are ubiquitously available but have very low power densities, at different frequency bands, with unknown directions of incidence and polarization. In order to harvest a significant quantity of energy it is mandatory to put a very special care in the design of each part of the receiving/storing system. For this purpose a combination of resonant antennas, each one designed for a specific application-dependent frequency band, is optimised together with the rectifying circuit and the load. This is accomplished by a rigorous design tool, based on the concurrent use of nonlinear and electromagnetic CAD methods. Multi-source non linear simulation of the harvester in realistic operating conditions predicts a DC power of a few hundred μW, which represents the typical energy requirement of a sensor node.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128887453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A novel design methodology for simultaneously matched LNAs based on noise measure","authors":"W. Ciccognani, S. Colangeli, E. Limiti, P. Longhi","doi":"10.23919/eumc.2009.5296171","DOIUrl":"https://doi.org/10.23919/eumc.2009.5296171","url":null,"abstract":"This contribution presents a novel narrow-band design methodology for low-noise amplifiers which is based on the use of the noise measure and of the reactive interstage networks. The most interesting result is the chance of obtaining a simultaneous matching condition both at the input and at the output ports of the amplifier without sacrifying the noise factor, which is also optimized. Moreover, as a test vehicle of the presented procedure, the design of a K-band LNA is discussed which has been developed starting from the narrow-band approach.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116058440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}