Concurrent dual band 2.4/3.5GHz fully integrated power amplifier in 0.13µm CMOS technology

M. R. Ghajar, S. Boumaiza
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引用次数: 18

Abstract

this paper proposes novel dual-band matching network, suitable for the design of integrated concurrent dual band power amplifier in a multi-standard radiofrequency frontend. The effectiveness of the proposed dual band matching network was demonstrated through the implementation of a power amplifier operating at 2.4GHz and 3.5GHz in IBM 0.13µm CMOS technology. The designed 1.25mm×1.25mm dual band PA allowed for Power Added Efficiency (PAE) and output power of about 42% and more than 18dbm, respectively, at both frequencies.
并行双频2.4/3.5GHz全集成功率放大器,采用0.13µm CMOS技术
本文提出了一种适用于多标准射频前端集成并发双频功率放大器设计的新型双频匹配网络。通过在IBM 0.13µm CMOS技术上实现工作在2.4GHz和3.5GHz的功率放大器,验证了所提出的双频匹配网络的有效性。设计的1.25mm×1.25mm双频PA在两个频率下的功率附加效率(PAE)和输出功率分别约为42%和超过18dbm。
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