{"title":"s波段分立和MMIC GaN功率放大器","authors":"J. Nilsson, N. Billstrom, N. Rorsman, P. Romanini","doi":"10.23919/eumc.2009.5296325","DOIUrl":null,"url":null,"abstract":"The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7–3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 µm GaN HEMT process supplied and processed by Chalmers.","PeriodicalId":148226,"journal":{"name":"2009 European Microwave Integrated Circuits Conference (EuMIC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"S-band discrete and MMIC GaN power amplifiers\",\"authors\":\"J. Nilsson, N. Billstrom, N. Rorsman, P. Romanini\",\"doi\":\"10.23919/eumc.2009.5296325\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7–3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 µm GaN HEMT process supplied and processed by Chalmers.\",\"PeriodicalId\":148226,\"journal\":{\"name\":\"2009 European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/eumc.2009.5296325\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2009.5296325","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
摘要
在欧洲，将氮化镓器件用于微波功率放大器开始成为现实。本文介绍了两种s波段(2.7-3.3 GHz)高功率放大器的设计;一个分立的100w输出级和一个10w MMIC功率放大器。分立功率放大器采用两根总栅极宽度为19.2 mm的GaN电源棒设计。GaN能量棒是由Selex-SI在欧洲合作项目Korrigan中开发的。MMIC功率放大器采用Chalmers提供和加工的0.25µm GaN HEMT工艺设计。
The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7–3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 µm GaN HEMT process supplied and processed by Chalmers.
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